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PHP26N10E Datasheet(PDF) 2 Page - NXP Semiconductors |
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PHP26N10E Datasheet(HTML) 2 Page - NXP Semiconductors |
2 / 7 page Philips Semiconductors Product specification PowerMOS transistor PHP26N10E ELECTRICAL CHARACTERISTICS T j = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V (BR)DSS Drain-source breakdown V GS = 0 V; ID = 0.25 mA 100 - - V voltage ∆V (BR)DSS / Drain-source breakdown V DS = VGS; ID = 0.25 mA - 0.15 - V/K ∆T j voltage temperature coefficient R DS(ON) Drain-source on resistance V GS = 10 V; ID = 17 A - 0.07 0.08 Ω V GS(TO) Gate threshold voltage V DS = VGS; ID = 0.25 mA 2.0 3.0 4.0 V g fs Forward transconductance V DS = 50 V; ID = 17 A 8.7 16 - S I DSS Drain-source leakage current V DS = 100 V; VGS = 0 V - 1 25 µA V DS = 80 V; VGS = 0 V; Tj = 150 ˚C - 100 250 µA I GSS Gate-source leakage current V GS = ±30 V; VDS = 0 V - 10 100 nA Q g(tot) Total gate charge I D = 17 A; VDD = 80 V; VGS = 10 V - 35 45 nC Q gs Gate-source charge - 7 9 nC Q gd Gate-drain (Miller) charge - 17 25 nC t d(on) Turn-on delay time V DD = 50 V; ID = 17 A; - 18 - ns t r Turn-on rise time R G = 9.1 Ω; RD = 2.9 Ω -40 - ns t d(off) Turn-off delay time - 125 - ns t f Turn-off fall time - 50 - ns L d Internal drain inductance Measured from contact screw on - 3.5 - nH tab to centre of die L d Internal drain inductance Measured from drain lead 6 mm - 4.5 - nH from package to centre of die L s Internal source inductance Measured from source lead 6 mm - 7.5 - nH from package to source bond pad C iss Input capacitance V GS = 0 V; VDS = 25 V; f = 1 MHz - 1650 - pF C oss Output capacitance - 350 - pF C rss Feedback capacitance - 100 - pF SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS T j = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT I S Continuous source current T mb = 25˚C - - 26 A (body diode) I SM Pulsed source current (body T mb = 25˚C - - 104 A diode) V SD Diode forward voltage I S = 28 A; VGS = 0 V - - 1.7 V t rr Reverse recovery time I S = 17 A; VGS = 0 V; - 90 - ns dI/dt = 100 A/ µs Q rr Reverse recovery charge - 0.8 - µC February 1997 2 Rev 1.000 |
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