NTMFS4833NT1G datasheet(4/7 Pages) ONSEMI

Part #	NTMFS4833NT1G

Description	Power MOSFET 30 V, 191 A, Single N-Channel, SO-8 FL

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NTMFS4833N

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TYPICAL PERFORMANCE CURVES

4.2 V thru 10 V

2.8 V

3.2 V

3.0 V

200

0.003

0

100

1.0

0

1,000

100,000

02

1

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

0

VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

Figure 1. On−Region Characteristics

Figure 2. Transfer Characteristics

2

0.006

0

4

Figure 3. On−Resistance vs. Gate−to−Source

Voltage

VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

Figure 4. On−Resistance vs. Drain Current and

Gate Voltage

ID, DRAIN CURRENT (AMPS)

Figure 5. On−Resistance Variation with

Temperature

TJ, JUNCTION TEMPERATURE (°C)

Figure 6. Drain−to−Source Leakage Current

vs. Voltage

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

−50

25

0

−25

50

75

23

15

10

30

0

3

VDS ≥ 10 V

TJ = 25°C

TJ = −55°C

TJ = 125°C

VGS = 4.5 V

125

VGS = 0 V

ID = 30 A

VGS = 10 V

TJ = 150°C

50

0

45

TJ = 25°C

20

VGS = 4.0 V

1.75

100

40

650

0.001

75

3.4 V

3.6 V

3.8 V

50

25

200

25

200

ID = 30 A

TJ = 25°C

8

VGS = 11.5 V

100

TJ = 25°C

0.002

25

5

75

1

10

12

0.004

25

75

100

125

150

175

100

175

0.002

0.004

0.008

125

175

150

1.5

0.5

TJ = 125°C

150

0.010

125

150

10,000

5

0.25

0.75

1.25

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