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PHW13N40E Datasheet(PDF) 2 Page - NXP Semiconductors |
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PHW13N40E Datasheet(HTML) 2 Page - NXP Semiconductors |
2 / 10 page Philips Semiconductors Product specification PowerMOS transistors PHP13N40E, PHB13N40E, PHW13N40E Avalanche energy rated AVALANCHE ENERGY LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT E AS Non-repetitive avalanche Unclamped inductive load, I AS = 13.6 A; - 705 mJ energy t p = 0.2 ms; Tj prior to avalanche = 25˚C; V DD ≤ 50 V; RGS = 50 Ω; VGS = 10 V E AR Repetitive avalanche energy 2 I AR = 13.7 A; tp = 2.5 µs; Tj prior to - 18 mJ avalanche = 25˚C; R GS = 50 Ω; VGS = 10 V I AS, IAR Repetitive and non-repetitive - 13.7 A avalanche current THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT R th j-mb Thermal resistance junction - - 0.8 K/W to mounting base R th j-a Thermal resistance junction SOT78 package, in free air - 60 - K/W to ambient SOT429 package, in free air - 45 - K/W SOT404 package, pcb mounted, minimum - 50 - K/W footprint ELECTRICAL CHARACTERISTICS T j = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V (BR)DSS Drain-source breakdown V GS = 0 V; ID = 0.25 mA 400 - - V voltage ∆V (BR)DSS / Drain-source breakdown V DS = VGS; ID = 0.25 mA - 0.1 - %/K ∆T j voltage temperature coefficient R DS(ON) Drain-source on resistance V GS = 10 V; ID = 6.5 A - 0.26 0.35 Ω V GS(TO) Gate threshold voltage V DS = VGS; ID = 0.25 mA 2.0 3.0 4.0 V g fs Forward transconductance V DS = 30 V; ID = 6.5 A 4 7.5 - S I DSS Drain-source leakage current V DS = 400 V; VGS = 0 V - 1 25 µA V DS = 320 V; VGS = 0 V; Tj = 125 ˚C - 50 500 µA I GSS Gate-source leakage current V GS = ±30 V; VDS = 0 V - 10 200 nA Q g(tot) Total gate charge I D = 13 A; VDD = 320 V; VGS = 10 V - 79 100 nC Q gs Gate-source charge - 7.2 12 nC Q gd Gate-drain (Miller) charge - 43 55 nC t d(on) Turn-on delay time V DD = 200 V; RD = 15 Ω; - 16 - ns t r Turn-on rise time R G = 5.6 Ω -40 - ns t d(off) Turn-off delay time - 100 - ns t f Turn-off fall time - 42 - ns L d Internal drain inductance Measured from tab to centre of die - 3.5 - nH L d Internal drain inductance Measured from drain lead to centre of die - 4.5 - nH (SOT78 package only) L s Internal source inductance Measured from source lead to source - 7.5 - nH bond pad C iss Input capacitance V GS = 0 V; VDS = 25 V; f = 1 MHz - 1283 - pF C oss Output capacitance - 218 - pF C rss Feedback capacitance - 120 - pF 2 pulse width and repetition rate limited by T j max. December 1998 2 Rev 1.000 |
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