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M29F800DT90N1E Datasheet(PDF) 1 Page - STMicroelectronics |
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M29F800DT90N1E Datasheet(HTML) 1 Page - STMicroelectronics |
1 / 53 page August 2006 Rev 5 1/53 1 M29F800DT M29F800DB 8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory Feature summary ■ Supply voltage –VCC = 5V ±10% for Program, Erase and Read ■ Access time: 55, 70, 90ns ■ Programming time – 10µs per Byte/Word typical ■ 19 Memory Blocks – 1 Boot Block (Top or Bottom location) – 2 Parameter and 16 Main Blocks ■ Program/Erase controller – Embedded Byte/Word Program algorithms ■ Erase Suspend and Resume modes – Read and Program another Block during Erase Suspend ■ Unlock Bypass Program command – Faster Production/batch Programming ■ Temporary Block Unprotection mode ■ Common Flash Interface – 64 bit Security Code ■ Low power consumption – Standby and Automatic Standby ■ 100,000 Program/Erase cycles per Block ■ Electronic Signature – Manufacturer Code: 0020h – Top Device Code M29F800DT: 22ECh – Bottom Device Code M29F800DB: 2258h TSOP48 (N) 12 x 20mm SO44 (M) www.st.com |
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