Electronic Components Datasheet Search
  English  ▼
ALLDATASHEET.COM

X  

K7I643684M-FECI30 Datasheet(PDF) 11 Page - Samsung semiconductor

Part # K7I643684M-FECI30
Description  72Mb DDRII SRAM Specification
Download  18 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

K7I643684M-FECI30 Datasheet(HTML) 11 Page - Samsung semiconductor

Back Button K7I643684M-FECI30 Datasheet HTML 7Page - Samsung semiconductor K7I643684M-FECI30 Datasheet HTML 8Page - Samsung semiconductor K7I643684M-FECI30 Datasheet HTML 9Page - Samsung semiconductor K7I643684M-FECI30 Datasheet HTML 10Page - Samsung semiconductor K7I643684M-FECI30 Datasheet HTML 11Page - Samsung semiconductor K7I643684M-FECI30 Datasheet HTML 12Page - Samsung semiconductor K7I643684M-FECI30 Datasheet HTML 13Page - Samsung semiconductor K7I643684M-FECI30 Datasheet HTML 14Page - Samsung semiconductor K7I643684M-FECI30 Datasheet HTML 15Page - Samsung semiconductor Next Button
Zoom Inzoom in Zoom Outzoom out
 11 / 18 page
background image
2Mx36 & 4Mx18 DDRII CIO b4 SRAM
K7I643684M
K7I641884M
- 11 -
Rev. 1.3 March 2007
AC ELECTRICAL CHARACTERISTICS (VDD=1.8V ±0.1V, TA=0°C to +70°C)
Notes: 1. This condition is for AC function test only, not for AC parameter test.
2. To maintain a valid level, the transition edge of the input must:
a) Sustain a constant slew rate from the current AC level through the target AC level, VIL(AC) or VIH(AC)
b) Reach at least the target AC level
c) After the AC target level is reached, continue to maintain at least the target DC level, VIL(DC) or VIH(DC)
PARAMETER
SYMBOL
MIN
MAX
UNIT
NOTES
Input High Voltage
VIH (AC)
VREF + 0.2
-
V
1,2
Input Low Voltage
VIL (AC)
-
VREF - 0.2
V
1,2
AC TIMING CHARACTERISTICS(VDD=1.8V±0.1V, TA=0°C to +70°C)
Notes: 1. All address inputs must meet the specified setup and hold times for all latching clock edges.
2. Control singles are R, W,BW0,BW1 and BW2, BW3, also for x36
3. If C,C are tied high, K,K become the references for C,C timing parameters.
4. To avoid bus contention, at a given voltage and temperature tCHQX1 is bigger than tCHQZ.
The specs as shown do not imply bus contention because tCHQX1 is a MIN parameter that is worst case at totally different test conditions
(0
°C, 1.9V) than tCHQZ, which is a MAX parameter(worst case at 70°C, 1.7V)
It is not possible for two SRAMs on the same board to be at such different voltage and temperature.
5. Clock phase jitter is the variance from clock rising edge to the next expected clock rising edge.
6. Vdd slew rate must be less than 0.1V DC per 50 ns for DLL lock retention. DLL lock time begins once Vdd and input clock are stable.
7. Echo clock is very tightly controlled to data valid/data hold. By design, there is a
± 0.1 ns variation from echo clock to data.
The data sheet parameters reflect tester guard bands and test setup variations.
PARAMETER
SYMBOL
-30
-25
-20
-16
UNIT NOTE
MIN
MAX
MIN
MAX
MIN
MAX
MIN
MAX
Clock
Clock Cycle Time (K, K, C, C)tKHKH
3.30
8.40
4.00
8.40
5.00
8.40
6.00
8.40
ns
Clock Phase Jitter (K, K, C, C)tKC var
0.20
0.20
0.20
0.20
ns
5
Clock High Time (K, K, C, C)tKHKL
1.32
1.60
2.00
2.40
ns
Clock Low Time (K, K, C, C)tKLKH
1.32
1.60
2.00
2.40
ns
Clock to Clock (K
↑ → K↑, C↑ → C↑)
tKHKH
1.49
1.80
2.20
2.70
ns
Clock to data clock (K
↑ → C↑, K↑→ C↑)
tKHCH
0.00
1.45
0.00
1.80
0.00
2.30
0.00
2.80
ns
DLL Lock Time (K, C)
tKC lock
1024
1024
1024
1024
cycle
6
K Static to DLL reset
tKC reset
30
30
30
30
ns
Output Times
C, C High to Output Valid
tCHQV
0.45
0.45
0.45
0.50
ns
3
C, C High to Output Hold
tCHQX
-0.45
-0.45
-0.45
-0.50
ns
3
C, C High to Echo Clock Valid
tCHCQV
0.45
0.45
0.45
0.50
ns
C, C High to Echo Clock Hold
tCHCQX
-0.45
-0.45
-0.45
-0.50
ns
CQ, CQ High to Output Valid
tCQHQV
0.27
0.30
0.35
0.40
ns
7
CQ, CQ High to Output Hold
tCQHQX
-0.27
-0.30
-0.35
-0.40
ns
7
C, High to Output High-Z
tCHQZ
0.45
0.45
0.45
0.50
ns
3
C, High to Output Low-Z
tCHQX1
-0.45
-0.45
-0.45
-0.50
ns
3
Setup Times
Address valid to K rising edge
tAVKH
0.40
0.50
0.60
0.70
ns
Control inputs valid to K rising edge
tIVKH
0.40
0.50
0.60
0.70
ns
2
Data-in valid to K, K rising edge
tDVKH
0.30
0.35
0.40
0.50
ns
Hold Times
K rising edge to address hold
tKHAX
0.40
0.50
0.60
0.70
ns
K rising edge to control inputs hold
tKHIX
0.40
0.50
0.60
0.70
ns
K, K rising edge to data-in hold
tKHDX
0.30
0.35
0.40
0.50
ns


Similar Part No. - K7I643684M-FECI30

ManufacturerPart #DatasheetDescription
logo
Samsung semiconductor
K7I643682M SAMSUNG-K7I643682M Datasheet
309Kb / 17P
   72Mb M-die DDRII SRAM Specification 165 FBGA with Pb & Pb-Free (RoHS compliant)
K7I643682M-EI16 SAMSUNG-K7I643682M-EI16 Datasheet
309Kb / 17P
   72Mb M-die DDRII SRAM Specification 165 FBGA with Pb & Pb-Free (RoHS compliant)
K7I643682M-EI20 SAMSUNG-K7I643682M-EI20 Datasheet
309Kb / 17P
   72Mb M-die DDRII SRAM Specification 165 FBGA with Pb & Pb-Free (RoHS compliant)
K7I643682M-EI25 SAMSUNG-K7I643682M-EI25 Datasheet
309Kb / 17P
   72Mb M-die DDRII SRAM Specification 165 FBGA with Pb & Pb-Free (RoHS compliant)
K7I643682M-EI30 SAMSUNG-K7I643682M-EI30 Datasheet
309Kb / 17P
   72Mb M-die DDRII SRAM Specification 165 FBGA with Pb & Pb-Free (RoHS compliant)
More results

Similar Description - K7I643684M-FECI30

ManufacturerPart #DatasheetDescription
logo
Samsung semiconductor
K7J643682M SAMSUNG-K7J643682M Datasheet
320Kb / 17P
   72Mb M-die DDRII SRAM Specification
K7I643682M SAMSUNG-K7I643682M Datasheet
309Kb / 17P
   72Mb M-die DDRII SRAM Specification 165 FBGA with Pb & Pb-Free (RoHS compliant)
K7I163682B SAMSUNG-K7I163682B_06 Datasheet
416Kb / 18P
   512Kx36 & 1Mx18 DDRII CIO b2 SRAM
K7I163684B SAMSUNG-K7I163684B Datasheet
422Kb / 18P
   512Kx36 & 1Mx18 DDRII CIO b4 SRAM
K7I323684C SAMSUNG-K7I323684C Datasheet
419Kb / 18P
   1Mx36 & 2Mx18 DDRII CIO b4 SRAM
K7I323682M SAMSUNG-K7I323682M Datasheet
377Kb / 17P
   1Mx36 & 2Mx18 DDRII CIO b2 SRAM
K7I643682M SAMSUNG-K7I643682M_07 Datasheet
417Kb / 18P
   2Mx36 & 4Mx18 DDRII CIO b2 SRAM
K7K1636T2C SAMSUNG-K7K1636T2C Datasheet
407Kb / 19P
   512Kx36 & 1Mx18 DDRII CIO b2 SRAM
K7K1636U2C SAMSUNG-K7K1636U2C Datasheet
600Kb / 19P
   512Kx36 & 1Mx18 DDRII CIO b2 SRAM
K7K3236T2C SAMSUNG-K7K3236T2C Datasheet
406Kb / 19P
   1Mx36 & 2Mx18 DDRII CIO b2 SRAM
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18


Datasheet Download

Go To PDF Page


Link URL




Privacy Policy
ALLDATASHEET.COM
Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Datasheet Upload   |   Contact us   |   Privacy Policy   |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com