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PHE13003AU Datasheet(PDF) 3 Page - NXP Semiconductors

Part No. PHE13003AU
Description  Silicon Diffused Power Transistor
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Maker  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
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 3 page
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Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
PHE13003AU
Fig.1. Test circuit for V
CEOsust.
Fig.2. Oscilloscope display for V
CEOsust.
Fig.3. Normalised power dissipation.
PD% = 100
⋅PD/PD
25˚C = f (Tmb)
!
Fig.4. Transient thermal impedance.
Zth
j-lead = f(t); parameter D = tp/T
Fig.5. Typical DC current gain. h
FE = f(IC)
parameter V
CE
Fig.6. Typical DC current gain. h
FE = f(IC)
parameter V
CE
+ 50v
100-200R
Horizontal
Vertical
Oscilloscope
1R
6V
30-60 Hz
300R
10us
1ms
0.1s
10ms
t / s
Zth j-mb / (K/W)
10
1
0.1
0.01
0
0.5
0.2
0.1
0.05
0.02
D =
tp
tp
T
T
P
t
D
D=
VCE / V
min
VCEOsust
IC / mA
10
100
250
0
0.001
0.01
0.1
1
2
3
5
1
5
10
15
20
30
IC/A
HFE
VCE = 1V
25 C
-40 C
125 C
0
20
40
60
80
100
120
140
Tmb / C
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
0.001
0.01
0.1
1
2
3
5
1
10
30
IC/A
HFE
VCE = 5V
25 C
-40 C
125 C
September 1999
3
Rev 1.000




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