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PHE13003AU Datasheet(PDF) 2 Page - NXP Semiconductors

Part No. PHE13003AU
Description  Silicon Diffused Power Transistor
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Maker  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
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 2 page
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Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
PHE13003AU
STATIC CHARACTERISTICS
T
mb = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
CES,ICBO
Collector cut-off current
1
V
BE = 0 V; VCE = VCESMmax
-
-
1.0
mA
I
CES
V
BE = 0 V; VCE = VCESMmax;
-
-
5.0
mA
T
j = 125 ˚C
I
CEO
Collector cut-off current
1
V
CEO = VCEOMmax (400V)
-
-
0.1
mA
I
EBO
Emitter cut-off current
V
EB = 9 V; IC = 0 A
-
-
1
mA
V
CEOsust
Collector-emitter sustaining voltage
I
B = 0 A; IC = 10 mA;
400
-
-
V
L = 25 mH
V
CEsat
Collector-emitter saturation voltage
I
C = 1.0 A;IB = 0.25 A
-
-
1.0
V
V
BEsat
Base-emitter saturation voltage
I
C = 1.0 A;IB = 0.25 A
-
-
1.2
V
h
FE
DC current gain
I
C = 100mA; VCE = 5 V
8
-
40
h
FE
I
C = 1.0 A; VCE = 5 V
5
-
25
DYNAMIC CHARACTERISTICS
T
mb = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
Switching times (resistive load)
I
Con = 1.0 A; IBon = -IBoff = 0.2 A;
R
L = 75 ohms; VBB2 = 4V;
t
on
Turn-on time
-
0.9
µs
t
s
Turn-off storage time
-
4.0
µs
t
f
Turn-off fall time
-
0.7
µs
Switching times (inductive load)
I
Con = 1.0 A; IBon = 0.2 A; LB = 1 µH;
-V
BB = 5 V
t
s
Turn-off storage time
-
2
µs
t
f
Turn-off fall time
-
100
ns
Switching times (inductive load)
I
Con = 1.0 A; IBon = 0.2 A; LB = 1 µH;
-V
BB = 5 V; Tj = 100 ˚C
t
s
Turn-off storage time
-
4
µs
t
f
Turn-off fall time
-
150
ns
1 Measured with half sine-wave voltage (curve tracer).
September 1999
2
Rev 1.000




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