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PHE13003AU Datasheet(PDF) 1 Page - NXP Semiconductors |
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PHE13003AU Datasheet(HTML) 1 Page - NXP Semiconductors |
1 / 7 page Philips Semiconductors Product specification Silicon Diffused Power Transistor PHE13003AU GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the SOT533 envelope intended for use in high frequency electronic lighting ballast applications, converters and inverters, etc. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT V CESM Collector-emitter voltage peak value V BE = 0 V - 700 V V CBO Collector-Base voltage (open emitter) - 700 V V CEO Collector-emitter voltage (open base) - 400 V I C Collector current (DC) - 1.5 A I CM Collector current peak value - 3 A P tot Total power dissipation T mb ≤ 25 ˚C - 50 W V CEsat Collector-emitter saturation voltage I C = 1.0 A;IB = 0.25 A - 1.0 V h FE I C = 1.0 A; VCE = 5 V - 25 t fi Fall time (Inductive) I C = 1.0 A; IBON = 0.2 A - 150 ns PINNING - SOT533 PIN CONFIGURATION SYMBOL PIN DESCRIPTION 1 base 2 collector 3 emitter tab collector LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V CESM Collector to emitter voltage V BE = 0 V - 700 V V CEO Collector to emitter voltage (open base) - 400 V V CBO Collector to base voltage (open emitter) - 700 V I C Collector current (DC) - 1.5 A I CM Collector current peak value - 3 A I B Base current (DC) - 0.75 A I BM Base current peak value - 1.5 A P tot Total power dissipation T mb ≤ 25 ˚C - 50 W T stg Storage temperature -65 150 ˚C T j Junction temperature - 150 ˚C THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT R th j-mb Junction to mounting base - 2.5 K/W R th j-a Junction to ambient in free air 70 - K/W 1 Top view MBK915 23 b c e September 1999 1 Rev 1.000 |
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