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PHE13003AU Datasheet(PDF) 1 Page - NXP Semiconductors

Part No. PHE13003AU
Description  Silicon Diffused Power Transistor
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Maker  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
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Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
PHE13003AU
GENERAL DESCRIPTION
High-voltage, high-speed planar-passivated npn power switching transistor in the SOT533 envelope intended for
use in high frequency electronic lighting ballast applications, converters and inverters, etc.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
V
CESM
Collector-emitter voltage peak value
V
BE = 0 V
-
700
V
V
CBO
Collector-Base voltage (open emitter)
-
700
V
V
CEO
Collector-emitter voltage (open base)
-
400
V
I
C
Collector current (DC)
-
1.5
A
I
CM
Collector current peak value
-
3
A
P
tot
Total power dissipation
T
mb ≤ 25 ˚C
-
50
W
V
CEsat
Collector-emitter saturation voltage
I
C = 1.0 A;IB = 0.25 A
-
1.0
V
h
FE
I
C = 1.0 A; VCE = 5 V
-
25
t
fi
Fall time (Inductive)
I
C = 1.0 A; IBON = 0.2 A
-
150
ns
PINNING - SOT533
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
base
2
collector
3
emitter
tab
collector
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CESM
Collector to emitter voltage
V
BE = 0 V
-
700
V
V
CEO
Collector to emitter voltage (open base)
-
400
V
V
CBO
Collector to base voltage (open emitter)
-
700
V
I
C
Collector current (DC)
-
1.5
A
I
CM
Collector current peak value
-
3
A
I
B
Base current (DC)
-
0.75
A
I
BM
Base current peak value
-
1.5
A
P
tot
Total power dissipation
T
mb ≤ 25 ˚C
-
50
W
T
stg
Storage temperature
-65
150
˚C
T
j
Junction temperature
-
150
˚C
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
R
th j-mb
Junction to mounting base
-
2.5
K/W
R
th j-a
Junction to ambient
in free air
70
-
K/W
1
Top view
MBK915
23
b
c
e
September 1999
1
Rev 1.000




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