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PHE13003AU Datasheet(PDF) 4 Page - NXP Semiconductors

Part No. PHE13003AU
Description  Silicon Diffused Power Transistor
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Maker  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
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 4 page
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Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
PHE13003AU
Fig.7. Collector-Emitter saturation voltage.
Fig.8. Base-Emitter saturation voltage.
Solid Lines = typ values, I
C/IB = 3
Solid Lines = typ values, I
C/IB = 3
Fig.9. Test circuit inductive load.
Fig.10. Switching times waveforms with inductive load.
V
CC = 300 V; -VBE = 5 V, LC = 200 µH; LB = 1 µH
Fig.11. Test circuit resistive load. V
IM = -6 to +8 V
Fig.12. Switching times waveforms with resistive load.
V
CC = 250 V; tp = 20 µs; δ = tp / T = 0.01.
R
B and RL calculated from ICon and IBon requirements.
0.01
0.1
1
2
0
0.5
1
1.5
2
IC, COLLECTOR CURRENT/A
VCEsat VOLTAGE/V
IC/IB = 3
25 C
-40 C
125 C
0.01
0.1
1
2
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
IC, COLLECTOR CURRENT/A
VBEsat VOLTAGE/V
IC/IB = 3
25 C
125 C
-40 C
LB
IBon
-VBB
LC
T.U.T.
VCC
IC
IB
ICon
IBon
-IBoff
t
t
ts
tf
toff
10 %
90 %
tp
T
VCC
R
R
T.U.T.
0
VIM
B
L
IC
IB
10 %
10 %
90 %
90 %
ton
toff
ts
tf
IBon
-IBoff
ICon
tr
30ns
September 1999
4
Rev 1.000




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