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RD45HMF1 Datasheet(PDF) 2 Page - Mitsubishi Electric Semiconductor |
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RD45HMF1 Datasheet(HTML) 2 Page - Mitsubishi Electric Semiconductor |
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2 / 7 page  MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD45HMF1 RoHS Compliance, Silicon MOSFET Power Transistor 900MHz,45W RD45HMF1 MITSUBISHI ELECTRIC 10 Jan 2006 OBSERVE HANDLING PRECAUTIONS TYPICAL CHARACTERISTICS DRAIN DISSIPATION VS. AMBIENT TEMPERATURE 0 40 80 120 160 0 40 80 120 160 200 AMBIENT TEMPERATURE Ta(°C) Vds VS. Ciss CHARACTERISTICS 0 50 100 150 200 250 300 0 5 10 15 20 Vds(V) Ta=+25°C f=1MHz Vds VS. Coss CHARACTERISTICS 0 100 200 300 400 500 0 5 10 15 20 Vds(V) Ta=+25°C f=1MHz Vds VS. Crss CHARACTERISTICS 0 10 20 30 40 0 5 10 15 20 Vds(V) Ta=+25°C f=1MHz Vgs-Ids CHARACTERISTICS 0 2 4 6 8 10 012 34 Vgs(V) Ta=+25°C Vds=10V Vds-Ids CHARACTERISTICS 0 2 4 6 8 10 024 68 10 Vds(V) Ta=+25°C Vgs=3.7V Vgs=2.5V Vgs=3.4V Vgs=3.1V Vgs=2.8V Vgs=2.2V Vgs=4V 2/7 |
Similar Part No. - RD45HMF1_06 |
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Similar Description - RD45HMF1_06 |
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