PHC21025 datasheet(6/16 Pages) PHILIPS

Part #	PHC21025

Description	Complementary enhancement mode MOS transistors

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Manufacturer	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

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6 / 16 page

1997 Jun 20

6

Philips Semiconductors

Product speciﬁcation

Complementary enhancement

mode MOS transistors

PHC21025

Crss

reverse transfer capacitance

N-channel

VGS = 0; VDS = 20 V; f = 1 MHz

−

50

−

pF

P-channel

VGS = 0; VDS = −20 V; f = 1 MHz

−

50

−

pF

QG

total gate charge

N-channel

VGS =10V; VDS = 15 V; ID = 2.3 A

−

10

30

nC

P-channel

VGS = −10 V; VDS = −15 V; ID = −2.3 A −

10

25

nC

QGS

gate-source charge

N-channel

VGS =10V; VDS = 15 V; ID = 2.3 A

−

1

−

nC

P-channel

VGS = −10 V; VDS = −15 V; ID = −2.3 A −

1

−

nC

QGD

gate-drain charge

N-channel

VGS =10V; VDS = 15 V; ID = 2.3 A

−

2.5

−

nC

P-channel

VGS = −10 V; VDS = −15 V; ID = −2.3 A −

3

−

nC

Switching times

ton

turn-on time

N-channel

VGS = 0to10V; VDD =20V;

ID = 1 A; RL =20 Ω

−

15

40

ns

P-channel

VGS =0to −10 V; VDD = −20 V;

ID = −1 A; RL =20 Ω

−

20

80

ns

toff

turn-off time

N-channel

VGS =10to0V; VDD =20V;

ID = 1 A; RL =20 Ω

−

25

140

ns

P-channel

VGS = −10 to 0 V; VDD = −20 V;

ID = −1 A; RL =20 Ω

−

50

140

ns

Source-drain diode

VSD

source-drain diode forward

voltage

N-channel

VGD = 0; IS = 1.25 A

−−

1.2

V

P-channel

VGD = 0; IS = −1.25 A

−−−1.6

V

trr

reverse recovery time

N-channel

IS = 1.25 A; di/dt = 100 A/µs

−

35

100

ns

P-channel

IS = −1.25 A; di/dt = 100 A/µs

−

150

200

ns

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

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