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RA45H7687M1 Datasheet(PDF) 6 Page - Mitsubishi Electric Semiconductor |
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RA45H7687M1 Datasheet(HTML) 6 Page - Mitsubishi Electric Semiconductor |
6 / 9 page MITSUBISHI RF POWER MODULE RoHS COMPLIANCE RA45H7687M1 RA45H7687M1 MITSUBISHI ELECTRIC 18 th Jan 2007 6/9 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS DUT Z G=50Ω 5 4 3 2 1 Z L=50Ω C3 C4 C2 C1 R1 A Directional Coupler Attenuator Pow er Meter Spectrum Analyzer - + DC Pow er Supply V GG2 + - DC Pow er Supply V DD - + DC Pow er Supply V GG1 Attenuator Pre- amplifier Pow er Meter Directional Coupler Attenuator Signal Generator TEST BLOCK DIAGRAM EQUIVALENT CIRCUIT EQUIVALENT CIRCUIT C3, C4: 4700pF, 22uF in parallel 1 RF Input added Gate Voltage 1(Pin & VGG1) 2 Gate Voltage 2(VGG2) 3 Drain Voltage (VDD) 4 RF Output (Pout) 5 RF Ground (Case) C1: 4700pF, C2: 1000pF, R1: suitable. Please refer the detail below. VGG1=3.4V 4 3 1 2 5 External resistance connected to VGG1; impedance between Pin&VGG1 and ground needs to make high impedance NOTE: Resistance between Gate Voltage 1, where RF is input, and ground equals to 15k ohm. that doesn't prevent RF characteristic on this module. VGG1 |
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