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PHB9N60E Datasheet(PDF) 8 Page - NXP Semiconductors |
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PHB9N60E Datasheet(HTML) 8 Page - NXP Semiconductors |
8 / 9 page Philips Semiconductors Product specification PowerMOS transistors PHB9N60E, PHW9N60E Avalanche energy rated MECHANICAL DATA Dimensions in mm Net Mass: 5 g Fig.21. SOT429; pin 2 connected to mounting base. Notes 1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent damage to MOS gate oxide. 2. Refer to mounting instructions for SOT429 envelope. 3. Epoxy meets UL94 V0 at 1/8". 5.3 4.0 21 max 15.5 min 1 2.2 max 0.4 2.5 0.9 max 5.3 max 3.5 16 max 5.45 seating plane 5.45 M o max 15.5 max 3.2 max 2 3 1.1 3.5 1.8 7.3 max December 1998 8 Rev 1.000 |
Similar Part No. - PHB9N60E |
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Similar Description - PHB9N60E |
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