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ML925J16F Datasheet(PDF) 1 Page - Mitsubishi Electric Semiconductor |
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ML925J16F Datasheet(HTML) 1 Page - Mitsubishi Electric Semiconductor |
1 / 3 page MITSUBISHI LASER DIODES ML9XX11,ML9XX16,ML9XX22 SERIES Notice : Some parametric limits are subject to change InGaAsP DFB LASER DIODES Dec. 2004 MITSUBISHI ELECTRIC TYPE NAME DESCRIPTION ML9XX11, ML9XX16 and ML9XX22 series are DFB (Distributed Feedback) laser diodes emitting light beam with emission wavelength of 1470 ~ 1610 nm. They are well suited for light source in long distance digital transmission application of coarse WDM. They are hermetically sealed devices with the photo diode for optical output monitoring. APPLICATION ·~1.25Gbps digital transmission system · Coarse WDM application FEATURES · Homogeneous grating (AR/HR facet coating) structure DFB · Wide temperature range operation ( 0 to 85ºC ) · Low threshold current (typical 8mA) · High speed response (typical 0.1nsec) · 8 wavelength with 20nm space at 1470 ~ 1610nm · φ5.6mm TO-CAN package · Flat window cap, or Aspherical lens cap ABSOLUTE MAXIMUM RATINGS Symbol Parameter Conditions Ratings Unit Po Light output power CW 10 mW If Forward current (Laser diode) --- 150 mA VRL Reverse voltage (Laser diode) --- 2 V VRD Reverse voltage (Photo diode) --- 20 V IFD Forward current (Photo diode) --- 2 mA Tc Case temperature --- 0 to +85 ºC Tstg Storage temperature --- -40 to +100 ºC ELECTRICAL/OPTICAL CHARACTERISTICS (Tc=25ºC otherwise specified) [ Flat window cap ; ML925B11F/ML925B16F/ML925B22F/ ML920J11S/ML920J16S/ML920J22S ] Symbol Parameter Test conditions Min. Typ. Max. Unit CW --- 8 15 Ith Threshold current CW, Tc=85 ºC --- 30 50 mA CW, Po=5mW --- 25 40 Iop Operation current CW, Po=5mW, Tc=85 ºC --- 60 80 mA Vop Operating voltage CW, Po=5mW --- 1.1 1.5 V η Slope efficiency CW, Po=5mW 0.20 0.28 --- mW/mA λp Peak wavelength CW, Po=5mW <**> nm θ // Beam divergence angle (parallel) CW, Po=5mW --- 25 35 deg. θ ┴ Beam divergence angle (perpendicular) CW, Po=5mW --- 35 45 deg. SMSR Side mode suppression ratio CW, Po=5mW Tc= 0 to +85 ºC 35 40 --- dB tr,tf Rise and Fall time Ib=Ith, 20-80% <*> --- 0.1 0.2 ns Im Monitoring output current (PD) CW, Po=5mW 0.05 0.2 --- mA Id Dark current (PD) VRD=5V --- --- 0.1 µA Ct Capacitance (PD) VRD=5V --- 10 20 pF <*> Except influence of the 18mm lead. ML925B11F / ML925B16F / ML925B22F ML920J11S / ML920J16S / ML920J22S ML925J11F / ML925J16F / ML925J22F ML920L11S / ML920L16S / ML920L22S |
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