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ML9XX11_04 Datasheet(PDF) 1 Page - Mitsubishi Electric Semiconductor

Part No. ML9XX11_04
Description  Notice : Some parametric limits are subject to change InGaAsP DFB LASER DIODES
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Maker  MITSUBISHI [Mitsubishi Electric Semiconductor]
Homepage  http://www.mitsubishichips.com
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MITSUBISHI LASER DIODES
ML9XX11 SERIES
Notice : Some parametric limits are subject to change
InGaAsP DFB LASER DIODES
Dec. 2004
MITSUBISHI
ELECTRIC
TYPE
NAME
DESCRIPTION
ML9XX11series are DFB (Distributed Feedback) laser
diodes emitting light beam around 1550nm.
They are well suited for light source in long
distance digital transmission system.
They are hermetically sealed
devices with the photo
diode for optical output monitoring.
APPLICATION
· ~1.25Gbps
digital transmission system
FEATURES
· Homogeneous grating (AR/HR facet coating) structure
DFB
· Wide temperature range operation ( -40 to 85ºC )
· Low
threshold current (typical 8mA)
· High speed response (typical 0.1nsec)
·
φ5.6mm TO-CAN package
· Flat window cap, Ball lens cap, or Aspherical lens cap
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Conditions
Ratings
Unit
Po
Light output power
CW
10
mW
If
Forward current (Laser diode)
---
150
mA
VRL
Reverse voltage (Laser diode)
---
2
V
VRD
Reverse voltage (Photo diode)
---
20
V
IFD
Forward current (Photo diode)
---
2
mA
Tc
Case temperature
---
-40 to +85
ºC
Tstg
Storage temperature
---
-40 to +100
ºC
ELECTRICAL/OPTICAL CHARACTERISTICS (Tc=25ºC otherwise specified)
[ Flat window cap ; ML925B11F / ML920J11S ]
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
CW
---
8
15
Ith
Threshold current
CW, Tc=85
ºC
---
30
50
mA
CW, Po=5mW
---
25
40
Iop
Operation current
CW, Po=5mW, Tc=85
ºC
---
60
80
mA
Vop
Operating voltage
CW, Po=5mW
---
1.1
1.5
V
η
Slope efficiency
CW, Po=5mW
0.20
0.28
---
mW/mA
λp
Peak wavelength
CW, Po=5mW
1530
1550
1570
nm
θ //
Beam divergence angle (parallel)
CW, Po=5mW
---
25
35
deg.
θ
Beam divergence angle
(perpendicular)
CW, Po=5mW
---
35
45
deg.
SMSR
Side mode suppression ratio
CW, Po=5mW
Tc= - 40 to +85
ºC
35
40
---
dB
tr,tf
Rise and Fall time
Ib=Ith, 20-80% <*>
---
0.1
0.2
ns
Im
Monitoring output current (PD)
CW, Po=5mW
0.05
0.2
---
mA
Id
Dark current (PD)
VRD=5V
---
---
0.1
µA
Ct
Capacitance (PD)
VRD=5V
---
10
20
pF
<*> Except influence of the 18mm lead.
ML925B11F / ML920J11S
ML925AA11F / ML920AA11S
ML925J11F / ML920L11S




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