PHB45N03LT datasheet(5/8 Pages) PHILIPS

Part #	PHB45N03LT

Description	TrenchMOS transistor Logic level FET

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Manufacturer	PHILIPS [NXP Semiconductors]

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Philips Semiconductors

Product specification

TrenchMOS

™ transistor

PHB45N03LT

Logic level FET

Fig.7. Typical transfer characteristics.

I

D = f(VGS) ; conditions: VDS = 25 V; parameter Tj

Fig.8. Typical transconductance, T

j = 25 ˚C.

g

fs = f(ID); conditions: VDS = 25 V

Fig.9. Normalised drain-source on-state resistance.

a = R

DS(ON)/RDS(ON)25 ˚C = f(Tj); ID = 25 A; VGS = 5 V

Fig.10. Gate threshold voltage.

V

GS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS

Fig.11. Sub-threshold drain current.

I

D = f(VGS); conditions: Tj = 25 ˚C; VDS = VGS

Fig.12. Typical capacitances, C

iss, Coss, Crss.

C = f(V

DS); conditions: VGS = 0 V; f = 1 MHz

0123

456

0

10

20

30

40

50

60

9528-30

VGS / V

ID / A

Tj / C = 25

175

BUK959-60

-100

-50

0

50

100

150

200

0

0.5

1

1.5

2

2.5

Tj / C

VGS(TO) / V

max.

typ.

min.

0

1020

3040

5060

0

5

10

15

20

25

9528-30

ID / A

gfs / S

Tj / C = 25

175

0

0.5

1

1.5

2

2.5

3

1E-05

1E-04

1E-03

1E-02

1E-01

Sub-Threshold Conduction

2%

typ

98%

-100

0

100

200

0

0.5

1

1.5

2

30V TrenchMOS

Tj / C

a

150

50

-50

0.1

1

10

100

1000

10000

9528-30

VDS / V

C / pF

Ciss

Coss

Crss

December 1997

5

Rev 1.300

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