PHB2N50 datasheet(2/7 Pages) PHILIPS

Part #	PHB2N50

Description	PowerMOS transistor

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Manufacturer	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

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Philips Semiconductors

Product specification

PowerMOS transistor

PHB2N50

ELECTRICAL CHARACTERISTICS

T

j = 25 ˚C unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

V

(BR)DSS

Drain-source breakdown

V

GS = 0 V; ID = 0.25 mA

500

-

V

voltage

∆V

(BR)DSS /

Drain-source breakdown

V

DS = VGS; ID = 0.25 mA

-

0.6

-

V/K

∆T

j

voltage temperature coefficient

R

DS(ON)

Drain-source on resistance

V

GS = 10 V; ID = 1 A

-

3.1

5

Ω

V

GS(TO)

Gate threshold voltage

V

DS = VGS; ID = 0.25 mA

2.0

3.0

4.0

V

g

fs

Forward transconductance

V

DS = 30 V; ID = 1 A

0.5

1.3

-

S

I

DSS

Drain-source leakage current

V

DS = 500 V; VGS = 0 V

-

1

25

µA

V

DS = 400 V; VGS = 0 V; Tj = 125 ˚C

-

30

250

µA

I

GSS

Gate-source leakage current

V

GS = ±30 V; VDS = 0 V

-

10

200

nA

Q

g(tot)

Total gate charge

I

D = 2 A; VDD = 400 V; VGS = 10 V

-

20

25

nC

Q

gs

Gate-source charge

-

2

3

nC

Q

gd

Gate-drain (Miller) charge

-

12

15

nC

t

d(on)

Turn-on delay time

V

DD = 250 V; ID = 2 A;

-

10

-

ns

t

r

Turn-on rise time

R

G = 24 Ω; RD = 120 Ω

-20

-

ns

t

d(off)

Turn-off delay time

-

60

-

ns

t

f

Turn-off fall time

-

20

-

ns

L

d

Internal drain inductance

Measured from tab to centre of die

-

3.5

-

nH

L

d

Internal drain inductance

Measured from drain lead solder

-

4.5

-

nH

point to centre of die

L

s

Internal source inductance

Measured from source lead solder

-

7.5

-

nH

point to source bond pad

C

iss

Input capacitance

V

GS = 0 V; VDS = 25 V; f = 1 MHz

-

236

-

pF

C

oss

Output capacitance

-

40

-

pF

C

rss

Feedback capacitance

-

22

-

pF

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

T

j = 25 ˚C unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

I

S

Continuous source current

T

mb = 25˚C

-

2

A

(body diode)

I

SM

Pulsed source current (body

T

mb = 25˚C

-

8

A

diode)

V

SD

Diode forward voltage

I

S = 2 A; VGS = 0 V

-

1.2

V

t

rr

Reverse recovery time

I

S = 2 A; VGS = 0 V; dI/dt = 100 A/µs

-

300

-

ns

Q

rr

Reverse recovery charge

-

2.1

-

µC

June 1997

2

Rev 1.000

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