NTD50N03R

http://onsemi.com

2

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter

Symbol

Value

Unit

Junction−to−Case (Drain)

3.0

°C/W

Junction−to−Ambient − Steady State (Note 3)

71.4

Junction−to−Ambient − Steady State (Note 4)

100

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

25

V

Drain−to−Source Breakdown Voltage

Temperature Coefficient

−16

mV/

°C

Zero Gate Voltage Drain Current

1.5

mA

10

Gate−to−Source Leakage Current

"100

nA

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage

1.0

1.7

2.0

V

Negative Threshold Temperature Coefficient

−5.0

mV/

°C

Drain−to−Source On Resistance

12

m

W

11.7

12.5

14

21

19

23

Forward Transconductance

15

S

CHARGES, CAPACITANCES AND GATE RESISTANCE

Input Capacitance

610

750

pF

Output Capacitance

300

Reverse Transfer Capacitance

125

Total Gate Charge

6.0

10

nC

Threshold Gate Charge

0.9

Gate−to−Source Charge

1.9

Gate−to−Drain Charge

3.7

Total Gate Charge

15

nC

Threshold Gate Charge

1.0

Gate−to−Source Charge

1.9

Gate−to−Drain Charge

3.9

3. Surface−mounted on FR4 board using 1 sq in pad, 1 oz Cu.

4. Surface−mounted on FR4 board using the minimum recommended pad size.

5. Pulse Test: Pulse Width

≤ 300 ms, Duty Cycle ≤ 2%.