PEMZ7 datasheet(4/12 Pages) PHILIPS

Part #	PEMZ7

Description	NPN/PNP general purpose transistors

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Manufacturer	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

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4 / 12 page

2001 Nov 07

4

Philips Semiconductors

Product speciﬁcation

NPN/PNP general purpose transistors

PEMZ7

CHARACTERISTICS

Tamb =25 °C; unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

Per transistor; for the PNP transistor with negative polarity

ICBO

collector-base cut-off current

VCB = 15 V; IE =0

−−

100

nA

VCB = 15 V; IE = 0; Tj = 150 °C

−−

50

µA

IEBO

emitter-base cut-off current

VEB =5V; IC =0

−−

100

nA

hFE

DC current gain

VCE =2V; IC =10mA

200

−−

VCEsat

collector-emitter saturation

voltage

IC = 200 mA; IB =10mA

−−

220

mV

fT

transition frequency

IC = 100 mA; VCE =5V;

f = 100 MHz

TR1 (NPN)

250

420

−

MHz

TR2 (PNP)

100

280

−

MHz

Cc

collector capacitance

VCB = 10 V; IE =Ie = 0; f = 1 MHz

TR1 (NPN)

−

4.4

6

pF

TR2 (PNP)

−−

10

pF

handbook, halfpage

0

400

600

200

100

300

500

MHC014

10−1

110

IC (mA)

hFE

102

103

(1)

(2)

(3)

Fig.2

DC current gain as a function of collector

current; typical values.

TR1 (NPN); VCE =2V.

(1) Tamb = 150 °C.

(2) Tamb =25 °C.

(3) Tamb = −55 °C.

handbook, halfpage

0

(1)

(2)

(3)

(4)

(6)

(8)

IC

(mA)

VCE (V)

1200

800

400

0

210

46

8

MLD672

(9)

(10)

(7)

(5)

Fig.3

Collector current as a function of

collector-emitter voltage; typical values.

TR1 (NPN); Tamb =25 °C.

(1) IB = 4.60 mA

(2) IB = 4.14 mA

(3) IB = 3.68 mA

(4) IB = 3.22 mA

(5) IB = 2.76 mA

(6) IB = 2.30 mA

(7) IB = 1.84 mA

(8) IB = 1.38 mA

(9) IB = 0.92 mA

(10) IB = 0.46 mA

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