TSUS520.

Document Number 81055

Rev. 2.0, 23-Feb-07

Vishay Semiconductors

www.vishay.com

1

94 8389

Infrared Emitting Diode, 950 nm, GaAs

Description

TSUS520. series are infrared emitting diodes in stan-

dard GaAs on GaAs technology, molded in a clear,

blue-grey tinted plastic package. The devices are

spectrally matched to silicon photodiodes and pho-

totransistors.

Features

• Low cost emitter

• Low forward voltage

• High radiant power and radiant intensity

• Suitable for DC and high pulse current

operation

• Standard T-1¾ (

∅ 5 mm) package

• Angle of half intensity

ϕ = ± 15°

• Peak wavelength

λ

• High reliability

• Good spectral matching to Si photodetectors

• Lead (Pb)-free component

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

Applications

• Infrared remote control and free air transmission

systems with low forward voltage and low cost

requirements in combination with PIN photodiodes

or phototransistors.

Absolute Maximum Ratings

e2

Parameter

Test condition

Symbol

Value

Unit

Reverse voltage

5V

Forward current

150

mA

Peak forward current

300

mA

Surge forward current

2.5

A

Power dissipation

210

mW

Junction temperature

100

°C

Operating temperature range

- 55 to + 100

°C

Storage temperature range

- 55 to + 100

°C

Soldering temperature

t

≤ 5 sec, 2 mm from case

260

°C

Thermal resistance junction/

ambient

375

K/W