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TSHG6200 Datasheet(PDF) 1 Page - Vishay Siliconix |
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TSHG6200 Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 6 page TSHG6200 Document Number 81078 Rev. 1.5, 28-Nov-06 Vishay Semiconductors www.vishay.com 1 94 8390 High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero Description TSHG6200 is a high speed infrared emitting diode in GaAlAs double hetero (DH) technology, molded in a clear, untinted plastic package. The new technology combines high speed with high radiant power at wavelength of 850 nm. Features • High modulation bandwidth • Extra high radiant power and radiant intensity • Low forward voltage • Suitable for high pulse current operation • Standard package T-1¾ ( ∅ 5 mm) • Angle of half intensity ϕ = ± 10° • Peak wavelength λ p = 850 nm • High reliability • Good spectral matching to Si photodetectors • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications • Infrared radiation source for CMOS cameras (illumination). High speed IR data transmission. Parts Table Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified e2 Part Remarks TSHG6200 MOQ: 4000 pc Parameter Test condition Symbol Value Unit Reverse voltage VR 5V Forward current IF 100 mA Peak forward current tp/T = 0.5, tp = 100 µs IFM 200 mA Surge forward current tp = 100 µs IFSM 1A Power dissipation PV 250 mW Junction temperature Tj 100 °C Operating temperature range Tamb - 40 to + 85 °C Storage temperature range Tstg - 40 to + 100 °C Soldering temperature t ≤ 5 sec, 2 mm from case Tsd 260 °C Thermal resistance junction/ ambient RthJA 300 K/W |
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