MRFE6S9130HR3 MRFE6S9130HSR3

1

RF Device Data

Freescale Semiconductor

RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs

Designed for N - CDMA, GSM and GSM EDGE base station applications

with frequencies from 865 to 960 MHz. Suitable for multicarrier amplifier

applications.

(Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth =

1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.

Power Gain — 19.2 dB

Drain Efficiency — 30.5%

ACPR @ 750 kHz Offset — -47.6 dBc in 30 kHz Bandwidth

• Capable of Handling 10:1 VSWR, @ 32 Vdc, 880 MHz, 3 dB Overdrive,

Designed for Enhanced Ruggedness

Features

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• Internally Matched for Ease of Use

• Integrated ESD Protection

• RoHS Compliant

• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Drain-Source Voltage

-0.5, +66

Vdc

Gate-Source Voltage

-0.5, +12

Vdc

Storage Temperature Range

- 65 to +150

°C

Case Operating Temperature

150

°C

Operating Junction Temperature

200

°C

Table 2. Thermal Characteristics

Characteristic

Symbol

Unit

Thermal Resistance, Junction to Case

Case Temperature 80°C, 130 W CW

Case Temperature 75°C, 27 W CW

0.45

0.51

°C/W

1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access

the MTTF calculators by product.

2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes - AN1955.

Document Number: MRFE6S9130H

Rev. 0, 4/2007

Freescale Semiconductor

Technical Data

MRFE6S9130HR3

MRFE6S9130HSR3

880 MHz, 27 W AVG., 28 V

SINGLE N-CDMA

LATERAL N-CHANNEL

RF POWER MOSFETs

CASE 465A-06, STYLE 1

NI-780S

MRFE6S9130HSR3

CASE 465-06, STYLE 1

NI-780

MRFE6S9130HR3

© Freescale Semiconductor, Inc., 2007. All rights reserved.