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MR0S16AVYS35 Datasheet(PDF) 9 Page - Freescale Semiconductor, Inc

Part # MR0S16AVYS35
Description  64K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM
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Manufacturer  FREESCALE [Freescale Semiconductor, Inc]
Direct Link  http://www.freescale.com
Logo FREESCALE - Freescale Semiconductor, Inc

MR0S16AVYS35 Datasheet(HTML) 9 Page - Freescale Semiconductor, Inc

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Timing Specifications
MR0A16A Advanced Information Data Sheet, Rev. 0
Freescale Semiconductor
9
Write Mode
Table 10. Write Cycle Timing 1 (W Controlled)1, 2, 3, 4, 5
Parameter
Symbol
Min
Max
Unit
Write cycle time6
tAVAV
35
ns
Address set-up time
tAVWL
0—
ns
Address valid to end of write (G high)
tAVWH
18
ns
Address valid to end of write (G low)
tAVWH
20
ns
Write pulse width (G high)
tWLWH
tWLEH
15
ns
Write pulse width (G low)
tWLWH
tWLEH
15
ns
Data valid to end of write
tDVWH
10
ns
Data hold time
tWHDX
0—
ns
Write low to data Hi-Z7, 8, 9
tWLQZ
012
ns
Write high to output active7, 8, 9
tWHQX
3—
ns
Write recovery time
tWHAX
12
ns
NOTES:
1
A write occurs during the overlap of E low and W low.
2
Due to product sensitivities to noise, power supplies must be properly grounded and decoupled and
bus contention conditions must be minimized or eliminated during read and write cycles.
3
If G goes low at the same time or after W goes low, the output will remain in a high-impedance state.
4
After W, E, or UB/LB has been brought high, the signal must remain in steady-state high for a minimum
of 2 ns.
5
The minimum time between E being asserted low in one cycle to E being asserted low in a subsequent
cycle is the same as the minimum cycle time allowed for the device.
6
All write cycle timings are referenced from the last valid address to the first transition address.
7
This parameter is sampled and not 100% tested.
8
Transition is measured
±200 mV from steady-state voltage.
9
At any given voltage or temperature, tWLQZ max < tWHQX min.


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