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PDTC143E Datasheet(PDF) 2 Page - NXP Semiconductors |
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PDTC143E Datasheet(HTML) 2 Page - NXP Semiconductors |
2 / 8 page 1998 Jul 31 2 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC143EE FEATURES • Built-in bias resistors R1 and R2 (typ. 4.7 k Ω each) • Simplification of circuit design • Reduces number of components and board space. APPLICATIONS • Especially suitable for space reduction in interface and driver circuits • Inverter circuit configurations without use of external resistors. DESCRIPTION NPN resistor-equipped transistor in an SC-75 plastic package. PNP complement: PDTA143EE. PINNING PIN DESCRIPTION 1 base/input 2 emitter/ground 3 collector/output Fig.1 Simplified outline (SC-75) and symbol. handbook, halfpage MAM346 1 2 3 Top view 12 3 R1 R2 Fig.2 Equivalent inverter symbol. MGA893 - 1 1 3 2 MARKING TYPE NUMBER MARKING CODE PDTC143EE 02 QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCEO collector-emitter voltage open base −− 50 V IO output current (DC) −− 100 mA ICM peak collector current −− 100 mA Ptot total power dissipation Tamb ≤ 25 °C −− 150 mW hFE DC current gain IC = 10 mA; VCE =5V 30 −− R1 input resistor 3.3 4.7 6.1 k Ω resistor ratio 0.8 1 1.2 R2 R1 ------- |
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