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MGFC40V6472 Datasheet(PDF) 1 Page - Mitsubishi Electric Semiconductor |
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MGFC40V6472 Datasheet(HTML) 1 Page - Mitsubishi Electric Semiconductor |
1 / 2 page MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC40V6472 6.4 - 7.2GHz BAND 10W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC40V6472A is an internally impedance matched OUTLINE DRAWING Unit: millimeters (inches) GaAs power FET especially designed for use in 6.4 - 7.2 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. FEATURES Internally matched to 50 ohm system High output power P1dB = 10W (TYP.) @ f=6.4 - 7.2 GHz High power gain GLP =9 dB (TYP.) @ f=6.4 - 7.2 GHz High power added efficiency P.A.E. = 32 % (TYP.) @ f=6.4 - 7.2 GHz Low Distortion[Item-51] IM3=-45 dBc(TYP.)@Po=29 dBm S.C.L. APPLICATION item 01 : 6.4 - 7.2 GHz band power amplifier item 51 : 6.4 - 7.2 GHz band digital radio communication QUALITY GRADE IG RECOMMENDED BIAS CONDITIONS VDS = 10 (V) (1): GATE ID = 2.4 (A) (2): SOURCE (FLANGE) Rg=50 (ohm) Refer to Bias Procedure GF-18 (3): DRAIN ABSOLUTE MAXIMUM RATINGS Symbol Parameter Ratings Unit < Keep safety first in your circuit designs! > VGDO Gate to drain voltage -15 V Mitsubishi Electric Corporation puts the maximum effort into VGSO Gate to source voltage -15 V making semiconductor products better and more reliable, ID Drain current 7.5 A but there is always the possibility that trouble may occur IGR Reverse gate current -20 mA with them. Trouble with semiconductors may lead to personal IGF Forward gate current 42 mA injury, fire or property damage. Remember to give due PT Total power dissipation 42.8 W consideration to safety when making your circuit designs, Tch Channel temperature 175 deg.C with appropriate measures such as (1)placement of Tstg Storage temperature -65 / +175 deg.C substitutive, auxiliary circuits, (2)use of non-flammable *1 : Tc=25 Deg.C material or (3)prevention against any malfunction or mishap. ABSOLUTE MAXIMUM RATINGS Symbol Parameter Test conditions Limits Unit Min Typ Max IDSS Saturated drain current VDS = 3V , VGS = 0V - 4.5 6 A Gm Transconductance VDS = 3V , ID = 2.2A - 2 - S VGS(off) Gate to source cut-off voltage VDS = 3V , ID = 40mA -2 -3 -4 V P1dB Output power at 1dB gain compression 39.5 40.5 - dBm GLP Linear power gain VDS=10V, ID(RF off)=2.4A, f=6.4-7.2GHz 7 9 - dB ID Drain current - 2.4 - A PAE Power added efficiency - 32 - % IM3 3rd order IM distortion *1 -42 -45 - dBc Rth(ch-c) Thermal resistance *2 Delta Vf method - - 3.5 Deg.C/W *1 : item -51,2 tone test,Po=29.0dBm Single Carrier Level,f=7.2GHz,Delta f=10MHz *2 : Channel-case MITSUBISHI June/2004 ELECTRIC 4.0+/-0.4 1.4 2MIN 2.4+/-0.2 0.1 17.4+/-0.3 R1.25 2MIN 0.6+/-0.15 (1) 24+/-0.3 20.4+/-0.2 13.4 (3) 8.0+/-0.2 R1.2 15.8 (2) |
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Similar Description - MGFC40V6472_04 |
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