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IRFR3303PBF Datasheet(PDF) 2 Page - International Rectifier |
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IRFR3303PBF Datasheet(HTML) 2 Page - International Rectifier |
2 / 10 page IRFR/U3303PbF Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 30 V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient 0.032 V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance 0.031 Ω VGS = 10V, ID = 18A VGS(th) Gate Threshold Voltage 2.0 4.0 V VDS = VGS, ID = 250µA gfs Forward Transconductance 9.3 S VDS = 25V, ID = 18A 25 µA VDS = 30V, VGS = 0V 250 VDS = 24V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage 100 VGS = 20V Gate-to-Source Reverse Leakage -100 nA VGS = -20V Qg Total Gate Charge 29 ID = 18A Qgs Gate-to-Source Charge 7.3 nC VDS = 24V Qgd Gate-to-Drain ("Miller") Charge 13 VGS = 10V, See Fig. 6 and 13 td(on) Turn-On Delay Time 11 VDD = 15V tr Rise Time 99 ID = 18A td(off) Turn-Off Delay Time 16 RG = 13Ω tf Fall Time 28 RD = 0.8Ω, See Fig. 10 Between lead, 6mm (0.25in.) from package and center of die contact Ciss Input Capacitance 750 VGS = 0V Coss Output Capacitance 400 pF VDS = 25V Crss Reverse Transfer Capacitance 140 = 1.0MHz, See Fig. 5 nH Electrical Characteristics @ TJ = 25°C (unless otherwise specified) LD Internal Drain Inductance LS Internal Source Inductance IGSS ns 4.5 7.5 IDSS Drain-to-Source Leakage Current Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage 1.3 V TJ = 25°C, IS = 18A, VGS = 0V trr Reverse Recovery Time 53 80 ns TJ = 25°C, IF = 18A Qrr Reverse RecoveryCharge 94 140 nC di/dt = 100A/µs ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 33
120 A Notes: ** When mounted on 1" square PCB (FR-4 or G-10 Material ) . For recommended footprint and soldering techniques refer to application note #AN-994 This is applied for I-PAK, LS of D-PAK is measured between lead and center of die contact Starting TJ = 25°C, L = 590µH RG = 25Ω, IAS = 18A. (See Figure 12) Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) I SD ≤ 18A, di/dt ≤ 140A/µs, V DD ≤ V(BR)DSS, TJ ≤ 150°C Pulse width ≤ 300µs; duty cycle ≤ 2%. S D G S D G
Caculated continuous current based on maximum allowable junction temperature; Package limitation current = 20A. |
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