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PDTC123JT Datasheet(PDF) 4 Page - NXP Semiconductors |
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PDTC123JT Datasheet(HTML) 4 Page - NXP Semiconductors |
4 / 8 page 1999 May 18 4 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC123JT Fig.3 DC current gain as a function of collector current; typical values. VCE =5V. (1) Tamb = 150 °C. (2) Tamb =25 °C. (3) Tamb = −40 °C. handbook, halfpage MGM912 10−1 110 102 IC (mA) hFE 103 10 102 1 (1) (2) (3) Fig.4 Collector-emitter saturation voltage as a function of collector current; typical values. IC/IB = 20. (1) Tamb = 100 °C. (2) Tamb =25 °C. (3) Tamb = −40 °C. handbook, halfpage 103 102 10 MGM911 10−1 110 102 IC (mA) VCEsat (mV) (1) (2) (3) Fig.5 Input-off voltage as a function of collector current; typical values. VCE =5V. (1) Tamb = −40 °C. (2) Tamb =25 °C. (3) Tamb = 100 °C. handbook, halfpage 10 (2) (3) (1) 1 10−1 MGM914 10−2 10−1 110 IC (mA) Vi(off) (V) Fig.6 Input-on voltage as a function of collector current; typical values. VCE = 0.3 V. (1) Tamb = −40 °C. (2) Tamb =25 °C. (3) Tamb = 100 °C. handbook, halfpage 102 1 10 10−1 MGM913 10−1 110 102 IC (mA) Vi(on) (V) (1) (2) (3) |
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