PDTC123JT datasheet(4/8 Pages) PHILIPS

Part #	PDTC123JT

Description	NPN resistor-equipped transistor

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Manufacturer	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

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4 / 8 page

1999 May 18

4

Philips Semiconductors

Product speciﬁcation

NPN resistor-equipped transistor

PDTC123JT

Fig.3

DC current gain as a function of collector

current; typical values.

VCE =5V.

(1) Tamb = 150 °C.

(2) Tamb =25 °C.

(3) Tamb = −40 °C.

handbook, halfpage

MGM912

10−1

110

102

IC (mA)

hFE

103

10

102

1

(1)

(2)

(3)

Fig.4

Collector-emitter saturation voltage as a

function of collector current; typical values.

IC/IB = 20.

(1) Tamb = 100 °C.

(2) Tamb =25 °C.

(3) Tamb = −40 °C.

handbook, halfpage

103

102

10

MGM911

10−1

110

102

IC (mA)

VCEsat

(mV)

(1) (2) (3)

Fig.5

Input-off voltage as a function of collector

current; typical values.

VCE =5V.

(1) Tamb = −40 °C.

(2) Tamb =25 °C.

(3) Tamb = 100 °C.

handbook, halfpage

10

(2)

(3)

(1)

1

10−1

MGM914

10−2

10−1

110

IC (mA)

Vi(off)

(V)

Fig.6

Input-on voltage as a function of collector

current; typical values.

VCE = 0.3 V.

(1) Tamb = −40 °C.

(2) Tamb =25 °C.

(3) Tamb = 100 °C.

handbook, halfpage

102

1

10

10−1

MGM913

10−1

110

102

IC (mA)

Vi(on)

(V)

(1) (2) (3)

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PDTC123JT Datasheet(PDF) 4 Page - NXP Semiconductors

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