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3D3225S-100 Datasheet(PDF) 3 Page - Data Delay Devices, Inc. |
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3D3225S-100 Datasheet(HTML) 3 Page - Data Delay Devices, Inc. |
3 / 4 page 3D3225 Doc #05003 DATA DELAY DEVICES, INC. 3 5/8/2006 3 Mt. Prospect Ave. Clifton, NJ 07013 APPLICATION NOTES (CONT’D) custom reference designator identifying the intended frequency and duty cycle of operation. The programmed delay accuracy of the device is guaranteed, therefore, only for the user specified input characteristics. Small input pulse width variation about the selected pulse width will only marginally impact the programmed delay accuracy, if at all. Nevertheless, it is strongly recommended that the engineering staff at DATA DELAY DEVICES be consulted. POWER SUPPLY AND TEMPERATURE CONSIDERATIONS The delay of CMOS integrated circuits is strongly dependent on power supply and temperature. The monolithic 3D3225 programmable delay line utilizes novel and innovative compensation circuitry to minimize the delay variations induced by fluctuations in power supply and/or temperature. The thermal coefficient is reduced to 250 PPM/C, which is equivalent to a variation, over the -40C to 85C operating range, of ±2% from the room- temperature delay settings and/or 1.0ns, whichever is greater. The power supply coefficient is reduced, over the 3.0V-3.6V operating range, to ±1% of the delay settings at the nominal 3.3VDC power supply and/or 1.0ns, whichever is greater. It is essential that the power supply pin be adequately bypassed and filtered. In addition, the power bus should be of as low an impedance construction as possible. Power planes are preferred. DEVICE SPECIFICATIONS TABLE 2: ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL MIN MAX UNITS NOTES DC Supply Voltage VDD -0.3 7.0 V Input Pin Voltage VIN -0.3 VDD+0.3 V Input Pin Current IIN -1.0 1.0 mA 25C Storage Temperature TSTRG -55 150 C Lead Temperature TLEAD 300 C 10 sec TABLE 3: DC ELECTRICAL CHARACTERISTICS (-40C to 85C, 3.0V to 3.6V) PARAMETER SYMBOL MIN TYP MAX UNITS NOTES Static Supply Current* IDD 3.5 5.5 mA High Level Input Voltage VIH 2.0 V Low Level Input Voltage VIL 0.8 V High Level Input Current IIH 1.0 µA VIH = VDD Low Level Input Current IIL 1.0 µA VIL = 0V High Level Output Current IOH -15.0 -4.0 mA VDD = 3.0V VOH = 2.4V Low Level Output Current IOL 4.0 15.0 mA VDD = 3.0V VOL = 0.4V Output Rise & Fall Time TR & TF 2.0 2.5 ns CLD = 5 pf *IDD(Dynamic) = 5 * CLD * VDD * F Input Capacitance = 10 pf typical where: CLD = Average capacitance load/tap (pf) Output Load Capacitance (CLD) = 25 pf max F = Input frequency (GHz) |
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