1998 May 20

3

Philips Semiconductors

Product specification

PNP resistor-equipped transistor

PDTA144EK

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Note

1. Transistor mounted on an FR4 printed-circuit board.

THERMAL CHARACTERISTICS

Note

1. Transistor mounted on an FR4 printed-circuit board.

CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

collector-base voltage

open emitter

−−50

V

collector-emitter voltage

open base

−−50

V

emitter-base voltage

open collector

−−10

V

input voltage

positive

−

+10

V

negative

−−40

V

output current (DC)

−−100

mA

peak collector current

−−100

mA

total power dissipation

−

250

mW

storage temperature

−65

+150

°C

junction temperature

−

150

°C

operating ambient temperature

−65

+150

°C

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

thermal resistance from junction to ambient

note 1

500

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

collector cut-off current

−−−100

nA

collector cut-off current

−−−1

µA

−−−50

µA

emitter cut-off current

−−−90

µA

DC current gain

80

−−

collector-emitter saturation voltage

−−−150

mV

input-off voltage

−−1.2

−0.8

V

input-on voltage

−3

−1.6

−

V

R1

input resistor

33

47

61

k

Ω

resistor ratio

0.8

1

1.2

collector capacitance

−−

3pF

R2

R1

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