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PDTA114ET Datasheet(PDF) 4 Page - NXP Semiconductors |
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PDTA114ET Datasheet(HTML) 4 Page - NXP Semiconductors |
4 / 8 page 1999 Apr 13 4 Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA114ET Fig.3 DC current gain as a function of collector current; typical values. VCE = −5V. (1) Tamb = 150 °C. (2) Tamb =25 °C. (3) Tamb = −40 °C. handbook, halfpage MBK780 −10−1 −1 −10 −102 IC (mA) hFE 103 10 102 1 (1) (2) (3) Fig.4 Collector-emitter saturation voltage as a function of collector current; typical values. IC/IB = 20. (1) Tamb = 100 °C. (2) Tamb =25 °C. (3) Tamb = −40 °C. handbook, halfpage MBK779 −1 −10 −102 −1 (2) (3) (1) −10−1 −10−2 IC (mA) VCEsat (V) Fig.5 Input-off voltage as a function of collector current; typical values. VCE = −5V. (1) Tamb = −40 °C. (2) Tamb =25 °C. (3) Tamb = 100 °C. handbook, halfpage −10 (2) (3) (1) −1 −10−1 MBK782 −10−2 −10−1 −1 −10 IC (mA) Vi(off) (V) Fig.6 Input-on voltage as a function of collector current; typical values. VCE = −0.3 V. (1) Tamb = −40 °C. (2) Tamb =25 °C. (3) Tamb = 100 °C. handbook, halfpage −102 −1 −10 −10−1 MBK781 −10−1 −1 −10 −102 IC (mA) (1) (2) (3) Vi(on) (V) |
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