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FMMT413TD Datasheet(PDF) 3 Page - Zetex Semiconductors |
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FMMT413TD Datasheet(HTML) 3 Page - Zetex Semiconductors |
3 / 6 page FMMT413 Issue 3 - March 2006 3 www.zetex.com © Zetex Semiconductors plc 2006 Electrical characteristics (at Tamb = 25°C unless otherwise stated) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage BVCBO 150 V Collector-emitter breakdown voltage BVCES 150 V IC = 100 A Collector-emitter breakdown voltage BVCEO 50 V IC = 10mA Emitter-base breakdown voltage BVEBO 6V IE = 100 A Collector cut-off current ICBO 100 nA VCB = 120V Emitter cut-off current IEBO 100 nA VEB = 4V Collector-emitter saturation voltage VCE(sat) 150 mV IC = 10mA, IB = 1mA Base-emitter saturation voltage VBE(sat) 800 mV IC = 10mA, IB = 1mA Current in second breakdown (pulsed) IUSB 22 A VC=110V, CCE=4.7nF (*) NOTES: (*) Measured with a circuit possessing an approximate loop inductance of 12nH. 25 A VC=130V, CCE=4.7nF (*) Static forward current transfer ratio hFE 50 IC = 10mA, VCE = 10V Collector-emitter inductance Lce 2.5 nH Standard SOT23 leads Transition frequency fT 150 MHz IC = 10mA, VCE = 5V, f = 20MHz Output capacitance COBO 2pF VCB = 10V, IE = 0, f = 1MHz |
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