FCX593_06 datasheet(2/6 Pages) ZETEX

Part #	FCX593

Description	SOT89 Silicon planar high voltage transistor

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Manufacturer	ZETEX [Zetex Semiconductors]

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FCX593

Issue 4 - November 2006

2

www.zetex.com

Electrical characteristics (at Tamb = 25°C unless otherwise stated)

Parameter

Symbol

Min.

Max.

Unit

Conditions

Base breakdown voltages

V(BR)CBO

-120

V

IC = -100 A

V(BR)CEO

-100

V

IC = -10mA (*)

NOTES:

(*) Measured under pulsed conditions. Pulse width = 300 s. Duty cycle

2%.

V(BR)EBO

-5

V

IE = -100 A

Cut-off currents

ICBO

-100

nA

VCB = -100V

IEBO

-100

nA

VEB = -4V

ICES

-100

nA

VCES = -100V

Saturation voltages

VCE(sat)

-0.2

V

IC = -250mA, IB = -25mA(*)

-0.3

V

IC = -250mA, IB = -25mA(*)

VBE(sat)

-1.1

V

IC = -500mA, IB = -50mA(*)

Base-emitter turn-on voltage

VBE(on)

-1

V

IC = -1mA, IB = -5V(*)

Static forward current

transfer ratio

hFE

100

IC = -1mA, VCE = -5V

100

IC = -250mA, VCE = -5V(*)

100

300

IC = -500mA, VCE = -5V(*)

50

IC = -1A, VCE = -5V(*)

Transition frequency

fT

50

MHz

IC = -50mA, VCE = -10V

f = 100MHz

Output capacitance

COBO

5pF

VCB = -10V, f = 1MHz

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