SOT89 PNP SILICON PLANAR

HIGH VOLTAGE TRANSISTOR

ISSUE 3 – FEBRUARY 1996

7

FEATURES

*

High V

CEO

*

Low saturation voltage

COMPLEMENTARY TYPE –

BST40

PARTMARKING DETAIL –

BT1

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

VALUE

UNIT

Collector-Base Voltage

-200

V

Collector-Emitter Voltage

-200

V

Emitter-Base Voltage

-4

V

Peak Pulse Current

-1

A

Continuous Collector Current

-500

mA

1W

Operating and Storage Temperature

Range

-65 to +150

°C

PARAMETER

SYMBOL

MIN.

TYP.

MAX.

UNIT

CONDITIONS.

Collector-Base

Breakdown Voltage

-200

V

Collector-Emitter

Breakdown Voltage

-200

V

Emitter-Base

Breakdown Voltage

-4

V

Collector Cut-Off

Current

-1

µA

Collector Cut-Off

Current

-50

µA

-20

µA

Collector-Emitter

Saturation Voltage

- 2.0

-0.5

V

V

Static Forward Current

Transfer Ratio

30

150

Transition Frequency

15

MHz

f = 30MHz

Output Capacitance

15

pF

*Measured under pulsed conditions. Pulse width=300

µs. Duty cycle ≤2%

For typical characteristics graphs see FMMTA92 datasheet.

BST15

C

C

B

E

SOT89

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