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NLAS3699MN1R2G Datasheet(PDF) 5 Page - ON Semiconductor

Part # NLAS3699MN1R2G
Description  Dual DPDT Ultra-Low RON Switch
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NLAS3699MN1R2G Datasheet(HTML) 5 Page - ON Semiconductor

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NLAS3699
http://onsemi.com
5
AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3.0 ns)
Symbol
Parameter
Test Conditions
VCC
(V)
VIS
(V)
Guaranteed Maximum Limit
Unit
*405C to 255C
t855C
Min
Typ*
Max
Min
Max
tON
Turn−On Time
RL = 50 W, CL = 35 pF
(Figures 3 and 4)
2.3 − 3.6
1.5
50
60
ns
tOFF
Turn−Off Time
RL = 50 W, CL = 35 pF
(Figures 3 and 4)
2.3 − 3.6
1.5
30
40
ns
tBBM
Minimum Break−Before−Make Time
VIS = 3.0
RL = 50 W, CL = 35 pF
(Figure 2)
3.0
1.5
2
15
ns
Typical @ 25, VCC = 3.6 V
CIN
Control Pin Input Capacitance
2.5
pF
CSN
SN Port Capacitance
72
pF
CD
D Port Capacitance When Switch is Enabled
230
pF
*Typical Characteristics are at 25
°C.
ADDITIONAL APPLICATION CHARACTERISTICS (Voltages Referenced to GND Unless Noted)
Symbol
Parameter
Condition
VCC
(V)
25
5C
Unit
Typical
BW
Maximum On−Channel −3dB
Bandwidth or Minimum Frequency
Response (Figure 12)
VIN centered between VCC and GND
(Figure 5)
1.65 − 3.6
20
MHz
VONL
Maximum Feed−through On Loss
VIN = 0 dBm @ 100 kHz to 50 MHz
VIN centered between VCC and GND (Figure 5)
1.65 − 3.6
−0.06
dB
VISO
Off−Channel Isolation (Figure 13)
f = 100 kHz; VIS = 1 V RMS; CL = 5 pF
VIN centered between VCC and GND(Figure 5)
1.65 − 3.6
−62
dB
Q
Charge Injection Select Input to
Common I/O (Figure 8)
VIN = VCC to GND, RIS = 0 W, CL = 1 nF
Q = CL x DVOUT (Figure 6)
1.65 − 3.6
50
pC
THD
Total Harmonic Distortion THD +
Noise (Figure 7)
FIS = 20 Hz to 20 kHz, RL = Rgen = 600 W, CL = 50 pF
VIS = 2 VPP
3.6
0.01
%
VCT
Channel−to−Channel Crosstalk
f = 100 kHz; VIS = 1 V RMS, CL = 5 pF, RL = 50 W
VIN centered between VCC and GND (Figure 5)
1.65 − 3.6
−62
dB
5. Off−Channel Isolation = 20log10 (Vcom/Vno), Vcom = output, Vno = input to off switch.


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