Integrated Silicon Solution, Inc. — 1-800-379-4774

1

ADVANCE INFORMATION

Rev. 00E

04/10/03

IS23SC1604

Copyright © 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability

arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any

published information and before placing orders for products.

C1

C2

C3

C4

C5

C6

C7

C8

Vcc

RST

CLK

FUS

GND

NC

I/O

PGM

16-KBIT SECURED SERIAL EEPROM

FEATURES

• 16K serial EEPROM with security features

• Comply with ISO/IEC Standard 7816-3

Synchronous Protocol

• Store and validate security codes

• Four protected application zones

• Provide transport code security

• Single 5V power supply for read/write/erase

operations

• Low power operation:

— 3 mA (max.) read current at 300 KHz

— 4 mA (max.) write/erase current

• 2 ms read access time at 300 KHz;

5 ms write cycle time

• 300 KHz serial clock rate

• High ESD protection: > 4 KV

• High reliability:

— 1,000,000 erase/write cycles

— 10 years data retention

• Standard CMOS Process

• Wide operating temperature range

— 0°C to +7

0°C Commercial; –40°C to +85°C

Industrial

• Data access only after validation of security

code

• Permanent invalidation of device upon eight

consecutive failed attempts to enter the correct

security code

• Separate read/write/erase access protections

for each application zone

• Allow the memory chip to be personalized if the

internal security fuse is not blown. If the internal

security fuse is blown, maximum security protection

of the memory will always be enabled.

ADVANCE INFORMATION

APRIL 2003

DESCRIPTION

IS23SC1604 is a low-cost, low-power, highly secured

16K bits (2K x 8) serial EEPROM. It is fabricated using

ISSI’s advanced CMOS technology.

The security features of IS23SC1604 provide high levels

of memory security protection for smart card applications.

The memory is partitioned into four application zones.

Each individual application zone is protected by multiple

security codes from unauthorized read/write/erase

access to the zone. In addition, an internal security fuse

is available for the card issuer to fully personalize the

device before releasing it to customer.

The device also features an internal high-voltage charge

pump for memory programming, 1,000,000 write/erase

cycles and ten years of data retention.

Pin Configuration: 8-pin Plastic DIP