ZXMC3A17DN8

SEMICO NDUC TORS

ISSUE 1 - OCTOBER 2005

ADVANCE INFORMATION

4

PARAMETER

SYMBOL

MIN.

TYP.

MAX.

UNIT

CONDITIONS

STATIC

Drain-Source Breakdown

Voltage

30

V

Zero Gate Voltage Drain

Current

0.5

Gate-Body Leakage

100

nA

Gate-Source Threshold

Voltage

1.0

V

Static Drain-Source On-State

Resistance

(1)

0.050

0.065

Forward

Transconductance

(1) (3)

10

S

DYNAMIC

(3)

Input Capacitance

600

pF

f=1MHz

Output Capacitance

104

pF

Reverse Transfer Capacitance

58.5

pF

SWITCHING

(2) (3)

Turn-On-Delay Time

2.9

ns

Rise Time

6.4

ns

Turn-Off Delay Time

16

ns

Fall Time

11.2

ns

Gate Charge

6.9

nC

Total Gate Charge

12.2

nC

Gate-Source Charge

1.7

nC

Gate-Drain Charge

2.4

nC

SOURCE-DRAIN DIODE

Diode Forward Voltage

(1)

0.85

0.95

V

Reverse Recovery Time

(3)

18.8

ns

di/dt=100A/ s

Reverse Recovery Charge

(3)

14.1

nC

N-CHANNEL

(1)

Measured under pulsed conditions. Pulse width

300ms; Duty cycle

2%.

(2)

Switching characteristics are independent of operating junction temperature.

(3)

For design aid only, not subject to production testing.