ZXMP3A16DN8

ISSUE 2 - MAY 2007

4

PARAMETER

SYMBOL

MIN.

TYP.

MAX.

UNIT CONDITIONS

STATIC

Drain-Source Breakdown Voltage

-30

V

Zero Gate Voltage Drain Current

-1.0

Gate-Body Leakage

100

nA

Gate-Source Threshold Voltage

-1.0

V

I

D

=-250 A,

Static Drain-Source On-State Resistance

(1)

0.045

0.070

Forward Transconductance

(1)(3)

9.2

S

DYNAMIC

(3)

Input Capacitance

1022

pF

f=1MHz

Output Capacitance

267

pF

Reverse Transfer Capacitance

229

pF

SWITCHING

(2) (3)

Turn-On Delay Time

3.8

ns

Rise Time

6.5

ns

Turn-Off Delay Time

37.1

ns

Fall Time

21.4

ns

Gate Charge

17.2

nC

Total Gate Charge

29.6

nC

Gate-Source Charge

2.8

nC

Gate-Drain Charge

8.6

nC

SOURCE-DRAIN DIODE

Diode Forward Voltage

(1)

-0.85

-0.95

V

Reverse Recovery Time

(3)

21.7

ns

di/dt= 100A/

μs

Reverse Recovery Charge

(3)

16.1

nC

NOTES

(1) Measured under pulsed conditions. Width

≤300μs. Duty cycle ≤ 2% .

(2) Switching characteristics are independent of operating junction temperature.

(3) For design aid only, not subject to production testing.