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ZXMN6A25DN8TC Datasheet(PDF) 4 Page - Zetex Semiconductors |
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ZXMN6A25DN8TC Datasheet(HTML) 4 Page - Zetex Semiconductors |
4 / 8 page ZXMN6A25DN8 Issue 4 - November 2006 4 www.zetex.com © Zetex Semiconductors plc 2006 Electrical characteristics (at Tamb = 25°C unless otherwise stated) Parameter Symbol Min. Typ. Max. Unit Conditions Static Drain-source breakdown voltage V(BR)DSS 60 V ID=250 A, VGS=0V Zero gate voltage drain current IDSS 1.0 mA VDS=60V, VGS=0V Gate-body leakage IGSS 100 nA VGS=±20V, VDS=0V Gate-source threshold voltage VGS(th) 1.0 V ID=250 A, VDS= VGS Static drain-source on-state resistance (*) NOTES: (*) Measured under pulsed conditions. Width=300 s. Duty cycle 2% . RDS(on) 0.050 VGS=10V, ID=3.6A 0.070 VGS=4.5V, ID=3A Forward transconductance(*)(‡) gfs 10.2 S VDS=15V,ID=4.5A Dynamic(‡) Input capacitance Ciss 1063 pF VDS=30V, VGS=0V,f=1MHz Output capacitance Coss 104 pF Reverse transfer capacitance Crss 64 pF Switching (†) (‡) (†) Switching characteristics are independent of operating junction temperature. (‡) For design aid only, not subject to production testing. Turn-on delay time td(on) 3.8 ns VDD =30V, ID=1A RG ≅6.0 , VGS=10V Rise time tr 4.0 ns Turn-off delay time td(off) 26.2 ns Fall Time tf 10.6 ns Gate charge Qg 11.0 nC VDS=30V,VGS=5V, ID=4.5A Total gate charge Qg 20.4 nC VDS=30V,VGS=10V, ID=4.5A Gate-source charge Qgs 4.1 nC Gate-drain charge Qgd 5.1 nC Source-drain diode Diode Forward Voltage(*) VSD 0.85 0.95 V TJ=25°C, IS=5.5A,VGS=0V Reverse recovery time(‡) trr 22.0 ns TJ=25°C, IF=2.2A, di/dt= 100A/ s Reverse recovery charge(‡) Qrr 21.4 nC |
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