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ZXMN6A09G Datasheet(PDF) 2 Page - Zetex Semiconductors |
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ZXMN6A09G Datasheet(HTML) 2 Page - Zetex Semiconductors |
2 / 8 page ZXMN6A09G Issue 2 - January 2007 2 www.zetex.com © Zetex Semiconductors plc 2007 Absolute maximum ratings NOTES: (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) For a device surface mounted on FR4 PCB measured at t 10 sec. (c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.02 pulse width=300 s - pulse width limited by maximum junction temperature. Parameter Symbol Limit Unit Drain-source voltage VDSS 60 V Gate-source voltage VGS ±20 V Continuous drain current @ VGS=10V; Tamb=25°C(b) ID 7.5 A @ VGS=10V; Tamb=70°C(b) 6 @ VGS=10V; Tamb=25°C(a) 5.4 Pulsed drain current(c) IDM 33 A Continuous source current (body diode)(b) IS 3.5 A Pulsed source current (body diode)(c) ISM 33 A Power dissipation at Tamb =25°C(a) PD 2W Linear derating factor 16 mW/°C Power dissipation at Tamb =25°C(b) PD 3.9 W Linear derating factor 31 mW/°C Operating and storage temperature range Tj, Tstg -55 to +150 °C Thermal resistance Parameter Symbol Limit Unit Junction to ambient(a) R JA 62.5 °C/W Junction to ambient(b) R JA 32.2 °C/W |
Similar Part No. - ZXMN6A09G_07 |
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Similar Description - ZXMN6A09G_07 |
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