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ZXTN25040DFL Datasheet(PDF) 4 Page - Zetex Semiconductors |
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ZXTN25040DFL Datasheet(HTML) 4 Page - Zetex Semiconductors |
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4 / 8 page  ZXTN25040DFL Issue 2 - January 2007 4 www.zetex.com © Zetex Semiconductors plc 2007 Electrical characteristics (at Tamb = 25°C unless otherwise stated) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage BVCBO 130 170 V IC = 100 A Collector-emitter breakdown voltage (forward blocking) BVCEX 130 170 V IC = 100 A; RBE < 1k or -1V < VBE < 0.25V Collector-emitter breakdown voltage (base open) BVCEO 40 63 V IC = 10mA (*) NOTES: (*) Measured under pulsed conditions. Pulse width 300 s; duty cycle 2%. Emitter-base breakdown voltage BVEBO 78.3 V IE = 100 A Emitter-collector breakdown voltage (reverse blocking) BVECX 67.4 V IE = 100 A, RBC < 1k or 0.25V > VBC > -0.25V Emitter-collector breakdown voltage (base open) BVECO 67.4 V IE = 100 A, Collector cut-off current ICBO <1 50 20 nA A VCB = 100V VCB = 100V, Tamb= 100°C Collector emitter cut-off current ICEX <1 100 nA VCE = 100V; RBE < 1k or -1V < VBE < 0.25V Emitter cut-off current IEBO <1 50 nA VEB = 5.6V Collector-emitter saturation voltage VCE(sat) 35 50 mV IC = 0.5A, IB = 50mA(*) 60 80 mV IC = 0.5A, IB = 10mA(*) 70 85 mV IC = 1A, IB = 100mA 145 185 mV IC = 1.5A, IB = 30mA(*) 235 285 mV IC = 4A, IB = 400mA(*) Base-emitter saturation voltage VBE(sat) 840 950 mV IC = 1.5A, IB = 30mA(*) Base-emitter turn-on voltage VBE(on) 770 850 mV IC = 1.5A, VCE = 2V(*) Static forward current transfer ratio hFE 300 450 900 IC = 10mA, VCE = 2V(*) 300 400 IC = 1A, VCE = 2V(*) 170 250 IC = 1.5A, VCE = 2V(*) 25 40 IC = 4A, VCE = 2V(*) Transition frequency fT 190 MHz IC = 50mA, VCE = 10V f = 100MHz Output capacitance Cobo 11.7 20 pF VCB = 10V, f = 1MHz(*) Delay time t(d) 64 ns VCC = 10V, IC = 1A, IB1 = IB2= 10mA. Rise time t(r) 108 ns Storage time t(s) 428 ns Fall time t(f) 130 ns |
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