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ZXTN25020CFHTA Datasheet(PDF) 4 Page - Zetex Semiconductors |
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ZXTN25020CFHTA Datasheet(HTML) 4 Page - Zetex Semiconductors |
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4 / 6 page  ZXTN25020CFH Issue 1 - June 2006 4 www.zetex.com © Zetex Semiconductors plc 2006 Electrical characteristics (at Tamb = 25°C unless otherwise stated) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage BVCBO 70 100 V IC = 100 A Collector-emitter breakdown voltage (forward blocking) BVCEX 70 100 IC = 100 A, RBE 1k or -1V < VBE < 0.25V Collector-emitter breakdown voltage (base open) BVCEO 20 35 V IC = 10mA (*) NOTES: (*) Measured under pulsed conditions. Pulse width 300 s; duty cycle 2%. Emitter-base breakdown voltage BVEBO 78.3 V IE = 100 A Emitter-collector breakdown voltage (reverse blocking) BVECX 68.0 V IE = 100 A, RBC 1k or 0.25V > VBC > -0.25V Emitter-collector breakdown voltage (base open) BVECO 56.6 V IE = 100 A, Collector-base cut-off current ICBO <1 50 20 nA A VCB = 56V VCB = 56V, Tamb= 100°C Collector-emitter cut-off current ICEX -100 nA VCE = 56V; RBE 1k or -1V < VBE < 0.25V Emitter-base cut-off current IEBO <1 50 nA VEB = 5.6V Collector-emitter saturation voltage VCE(sat) 35 45 mV IC = 1A, IB = 100mA(*) 53 65 mV IC = 1A, IB = 20mA(*) 85 100 mV IC = 2A, IB = 40mA(*) 175 220 mV IC = 4.5A, IB = 90mA(*) 125 140 mV IC = 4.5A, IB = 450mA(*) Base-emitter saturation voltage VBE(sat) 905 1000 mV IC = 4.5A, IB = 90mA(*) Base-emitter turn-on voltage VBE(on) 815 900 mV IC = 4.5A, VCE = 2V(*) Static forward current transfer ratio hFE 200 350 500 IC = 10mA, VCE = 2V(*) 180 320 IC = 1A, VCE = 2V(*) 90 145 IC = 4.5A, VCE = 2V(*) 25 40 IC = 10A, VCE = 2V(*) Transition frequency fT 185 MHz IC = 50mA, VCE = 10V f = 100MHz Output capacitance COBO 16.8 25 pF VCB = 10V, f = 1MHz(*) Delay time td 70.5 ns VCC = 10V. IC = 1A, IB1 = IB2= 10mA. Rise time tr 88 ns Storage time ts 266 ns Fall time tf 65 ns |
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