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ZXTN25012EFL Datasheet(PDF) 4 Page - Zetex Semiconductors |
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ZXTN25012EFL Datasheet(HTML) 4 Page - Zetex Semiconductors |
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4 / 8 page  ZXTN25012EFL Issue 2 - January 2007 4 www.zetex.com © Zetex Semiconductors plc 2007 Electrical characteristics (at Tamb = 25°C unless otherwise stated) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage BVCBO 20 40 V IC = 100 A Collector-emitter breakdown voltage BVCEO 12 17 V IC = 10mA (*) NOTES: (*) Measured under pulsed conditions. Pulse width 300 s; duty cycle 2%. Emitter-base breakdown voltage BVEBO 78.3 V IE = 100 A Emitter-collector breakdown voltage (reverse blocking) BVECX 68 V IE = 100 A, RBC 1k or 0.25v > VBC > -0.25V Emitter-collector breakdown voltage (base open) BVECO 4.5 5.5 V IE = 100 A, Collector cut-off current ICBO <1 50 nA VCB = 16V 20 AVCB = 16V, Tamb= 100°C Emitter-base cut-off current IEBO <1 50 nA VEB = 5.6V Collector-emitter saturation voltage VCE(sat) 50 65 mV IC = 1A, IB = 100mA(*) 70 85 mV IC = 1A, IB = 10mA(*) 105 130 mV IC = 2A, IB = 40mA(*) 235 300 mV IC = 5A, IB = 100mA(*) Base-emitter saturation voltage VBE(sat) 830 950 mV IC = 2A, IB = 40mA(*) Base-emitter turn-on voltage VBE(on) 745 850 mV IC = 2A, VCE = 2V(*) Static forward current transfer ratio hFE 500 800 1500 IC = 10mA, VCE = 2V(*) 500 700 IC = 1A, VCE = 2V(*) 370 575 IC = 2A, VCE = 2V(*) 210 335 IC = 5A, VCE = 2V(*) 30 55 IC = 15A, VCE = 2V(*) Transition frequency fT 260 MHz IC = 50mA, VCE = 10V f = 100MHz Output capacitance Cobo 25 35 pF VCB = 10V, f = 1MHz(*) Delay time t(d) 71 ns VCC = 10V IC = 1A, IB1 = IB2= 10mA Rise time t(r) 70 ns Storage time t(s) 233 ns Fall time t(f) 72 ns |
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