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APT60M75JFLL Datasheet(PDF) 2 Page - Advanced Power Technology |
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APT60M75JFLL Datasheet(HTML) 2 Page - Advanced Power Technology |
2 / 5 page DYNAMIC CHARACTERISTICS APT60M75JFLL Note: Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC t1 t2 SINGLE PULSE 10-5 10-4 10-3 10-2 10-1 1.0 10 RECTANGULARPULSEDURATION(SECONDS) FIGURE1,MAXIMUMEFFECTIVETRANSIENTTHERMALIMPEDANCE,JUNCTION-TO-CASEvsPULSEDURATION 0.25 0.20 0.15 0.10 0.05 0 0.5 0.1 0.3 0.7 0.9 0.05 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS THERMALCHARACTERISTICS Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current 1 (Body Diode) Diode Forward Voltage 2 (VGS = 0V, IS = -58A) Peak Diode Recovery dv/dt 5 Reverse Recovery Time (IS = -58A, di/dt = 100A/µs) Reverse Recovery Charge (IS = -58A, di/dt = 100A/µs) Peak Recovery Current (IS = -58A, di/dt = 100A/µs) Symbol IS ISM VSD dv/dt trr Qrr IRRM UNIT Amps Volts V/ns ns µC Amps MIN TYP MAX 58 232 1.3 15 Tj = 25°C 300 Tj = 125°C 600 Tj = 25°C 2.6 Tj = 125°C 10 Tj = 25°C 17 Tj = 125°C 34 Symbol RθJC RθJA MIN TYP MAX 0.21 40 UNIT °C/W Characteristic Junction to Case Junction to Ambient Symbol C iss C oss C rss Q g Q gs Q gd t d(on) t r t d(off) t f E on E off E on E off Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy 6 Turn-off Switching Energy Turn-on Switching Energy 6 Turn-off Switching Energy Test Conditions V GS = 0V V DS = 25V f = 1 MHz V GS = 10V V DD = 300V I D = 58A @ 25°C RESISTIVESWITCHING V GS = 15V V DD = 300V I D = 58A @ 25°C R G = 0.6Ω INDUCTIVE SWITCHING @ 25°C V DD = 400V, VGS = 15V I D = 58A, RG = 5Ω INDUCTIVE SWITCHING @ 125°C V DD = 400V VGS = 15V I D = 58A, RG = 5Ω MIN TYP MAX 8930 1130 50 195 48 100 23 15 55 10 1205 1385 1865 1550 UNIT pF nC ns µJ 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 4 Starting Tj = +25°C, L = 1.90mH, RG = 25Ω, Peak IL = 58A 5 dv /dt numbers reflect the limitations of the test circuit rather than the device itself. I S ≤ -ID58A di/dt ≤ 700A/µs V R ≤ 600V T J ≤ 150°C 6 Eon includes diode reverse recovery. See figures 18, 20. APT Reserves the right to change, without notice, the specifications and inforation contained herein. |
Similar Part No. - APT60M75JFLL_04 |
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Similar Description - APT60M75JFLL_04 |
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