APT8M100B datasheet(3/4 Pages) MICROSEMI

Part #	APT8M100B

Description	N-Channel MOSFET

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Manufacturer	MICROSEMI [Microsemi Corporation]

Direct Link	http://www.microsemi.com

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VGS= 6, 7, 8 & 9V

4.5V

T

J = 125°C

T

J = 25°C

T

J = -55°C

VGS = 10V

5V

V

DS> ID(ON) x RDS(ON) MAX.

250µSEC. PULSE TEST

@ <0.5 % DUTY CYCLE

NORMALIZED TO

V

GS = 10V @ 4A

T

J = 125°C

T

J = 25°C

T

J = -55°C

C

oss

C

iss

I

D = 4A

V

DS = 800V

V

DS = 200V

V

DS = 500V

T

J = 150°C

T

J = 25°C

TJ = 125°C

T

J = 150°C

C

rss

T

J = 125°C

T

J = 25°C

T

J = -55°C

V

DS(ON), DRAIN-TO-SOURCE VOLTAGE (V)

V

DS, DRAIN-TO-SOURCE VOLTAGE (V)

Figure 1, Output Characteristics

Figure 2, Output Characteristics

T

J, JUNCTION TEMPERATURE (°C)

V

GS, GATE-TO-SOURCE VOLTAGE (V)

Figure 3, RDS(ON) vs Junction Temperature

Figure 4, Transfer Characteristics

I

D, DRAIN CURRENT (A)

V

DS, DRAIN-TO-SOURCE VOLTAGE (V)

Figure 5, Gain vs Drain Current

Figure 6, Capacitance vs Drain-to-Source Voltage

Q

g, TOTAL GATE CHARGE (nC)

V

SD, SOURCE-TO-DRAIN VOLTAGE (V)

Figure 7, Gate Charge vs Gate-to-Source Voltage

Figure 8, Reverse Drain Current vs Source-to-Drain Voltage

0

5

10

15

20

25

30

0

5

10

15

20

25

30

-55 -25

0

25

50

75 100 125 150

0

1

2

3

4

5

6

7

8

0

1

2

3

4

5

0

200

400

600

800

1000

0

10

20

30

40

50

60

70

80

0

0.3

0.6

0.9

1.2

1.5

20

18

16

14

12

10

8

6

4

2

0

3.0

2.5

2.0

1.5

1.0

0.5

0

10

8

6

4

2

0

16

14

12

10

8

6

4

2

0

8

7

6

5

4

3

2

1

0

30

25

20

15

10

5

0

3,000

1,000

100

10

1

30

25

20

15

10

5

0

APT8M100B_S

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