©2002 Fairchild Semiconductor Corporation

Rev. B, November 2002

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaird.

NOTES:

1. These ratings are based on a maximum junction temperature of 150 degrees C.

2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations

Symbol

Parameter

Value

Units

Collector-Emitter Voltage

-12

V

Collector-Base Voltage

-12

V

Emitter-Base Voltage

-4.5

V

Collector Current

- Continuous

-200

mA

Operating and Storage Junction Temperature Range

- 55 ~ 150

°C

Symbol

Parameter

Test Condition

Min.

Max.

Units

Off Characteristics

Collector-Emitter Breakdown Voltage *

-12

V

Collector-Emitter Sustaining Voltage *

-12

V

Collector-Base Breakdown Voltage

-12

V

Emitter-Base Breakdown Voltage

-4.5

V

Collector Cutoff Current

-0.01

-5.0

µA

µA

On Characteristics

DC Current Gain

15

30

30

120

Collector-Emitter Saturation Voltage

-0.15

-0.5

V

V

Base-Emitter Saturation Voltage

-0.75

-0.95

-1.5

V

V

Small Signal Characteristics

Current Gain Bandwidth Product

700

700

MHz

MHz

Input Capacitance

3.5

pF

Collector-Base Capacitance

3.0

pF

PN4258

PNP Switching Transistor

• This device is designed for very high speed saturated switching at

collector currents to 100mA.

• Sourced from process 65.

1. Emitter 2. Base 3. Collector

TO-92

1