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PN4258 Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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PN4258 Datasheet(HTML) 1 Page - Fairchild Semiconductor |
1 / 8 page ©2002 Fairchild Semiconductor Corporation Rev. B, November 2002 Absolute Maximum Ratings* T A=25°C unless otherwise noted * These ratings are limiting values above which the serviceability of any semiconductor device may be impaird. NOTES: 1. These ratings are based on a maximum junction temperature of 150 degrees C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations Electrical Characteristics T A=25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage -12 V VCBO Collector-Base Voltage -12 V VEBO Emitter-Base Voltage -4.5 V IC Collector Current - Continuous -200 mA TJ, TSTG Operating and Storage Junction Temperature Range - 55 ~ 150 °C Symbol Parameter Test Condition Min. Max. Units Off Characteristics V(BR)CES Collector-Emitter Breakdown Voltage * IC = -100µA, VBE = 0 -12 V VCEO(SUS) Collector-Emitter Sustaining Voltage * IC =- 3.0mA, IB = 0 -12 V V(BR)CBO Collector-Base Breakdown Voltage IC = -100µA, IE = 0 -12 V V(BR)EBO Emitter-Base Breakdown Voltage IE = -100µA, IC = 0 -4.5 V ICES Collector Cutoff Current VCE = -6.0V, VBE = 0 VCE = -6.0V, VBE = 0, TA = 65°C -0.01 -5.0 µA µA On Characteristics hFE DC Current Gain IC = -1.0mA, VCE = -0.5V IC = -10mA, VCE = -3.0V IC = -50mA, VCE = -1.0V 15 30 30 120 VCE(sat) Collector-Emitter Saturation Voltage IC = -10mA, IB = -1.0mA IC = -50mA, IB = -5.0mA -0.15 -0.5 V V VBE(sat) Base-Emitter Saturation Voltage IC = -10mA, IB = -1.0mA IC = -50mA, IB = -5.0mA -0.75 -0.95 -1.5 V V Small Signal Characteristics fT Current Gain Bandwidth Product IC = -10mA, VCE = -5.0V, f = 100MHz IC = -10mA, VCE = -10V, f = 100MHz 700 700 MHz MHz Ciob Input Capacitance VBE = -0.5V, IC = 0, f = 1.0MHz 3.5 pF Ccb Collector-Base Capacitance VBE = -5.0V, IE = 0, f = 1.0MHz 3.0 pF PN4258 PNP Switching Transistor • This device is designed for very high speed saturated switching at collector currents to 100mA. • Sourced from process 65. 1. Emitter 2. Base 3. Collector TO-92 1 |
Similar Part No. - PN4258_02 |
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Similar Description - PN4258_02 |
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