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MMBT200 Datasheet(PDF) 3 Page - Fairchild Semiconductor |
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MMBT200 Datasheet(HTML) 3 Page - Fairchild Semiconductor |
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3 / 12 page  Typical Characteristics (continued) PNP General Purpose Amplifier (continued) Collector Saturation Region 100 300 700 2000 4000 0 1 2 3 4 I - BASE CURRENT (uA) B 50 mA 300 mA 100 uA Ta = 25°C Ic = Ω Collector-Emitter Breakdown Voltage with Resistance Between Emitter-Base 0.1 1 10 100 1000 70 75 80 85 90 95 RESISTANCE (k ) Input and Output Capacitance vs Reverse Voltage 0.1 1 10 100 10 100 V - COLLECTOR VOLTAGE (V) Cib Cob f = 1.0 MHz CE Collector-Cutoff Curre nt vs Ambient Temperature 25 50 75 100 125 0.01 0.1 1 10 100 T - AMBIE NT TEMP ERATURE ( C) A ° V = 50V CB Base-Emitter Saturation Voltage vs Collector Current 0.1 1 10 100 300 0 0.2 0.4 0.6 0.8 1 1.2 I - COLLECTOR CURRE NT (mA) C β = 10 25 °C - 40 °C 125 °C Base Emitter ON Voltage vs Collector Current 0.1 1 10 100 200 0 0.2 0.4 0.6 0.8 1 I - COLLECTOR CURRE NT (mA) C V = 5V CE 25 °C - 40 °C 125 °C |
Similar Part No. - MMBT200 |
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Similar Description - MMBT200 |
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