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ZVN4206V Datasheet(PDF) 2 Page - Zetex Semiconductors |
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ZVN4206V Datasheet(HTML) 2 Page - Zetex Semiconductors |
2 / 4 page ZVN4206GV ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS. Drain-Source Breakdown Voltage BVDSS 60 V ID=1mA, VGS=0V Gate-Source Threshold Voltage VGS(th) 1.3 3 V I D =1mA, VDS= VGS Gate-Body Leakage IGSS 100 nA VGS=± 20V, VDS=0V Zero Gate Voltage Drain Current IDSS 10 100 µA µA VDS=60V, VGS=0V VDS=48V, VGS=0V, T=125°C(2) On-State Drain Current (1) ID(on) 3A VDS=25V, VGS=10V Static Drain-Source On-State Resistance (1) RDS(on) 1 1.5 Ω Ω VGS=10V, ID=1.5A VGS=5V, ID=0.5A Forward Transconductance (1)(2) gfs 300 mS VDS=25V,ID=1.5A Input Capacitance (2) Ciss 100 pF Common Source Output Capacitance (2) Coss 60 pF VDS=25V, VGS=0V, f=1MHz Reverse Transfer Capacitance (2) Crss 20 pF Turn-On Delay Time (2)(3) td(on) 8ns VDD ≈25V, ID=1.5A, VGEN =10V Rise Time (2)(3) tr 12 ns Turn-Off Delay Time (2)(3) td(off) 12 ns Fall Time (2)(3) tf 15 ns (1) Measured under pulsed conditions. Width=300 µs. Duty cycle ≤2% (2) Sample test. (3) Switching times measured with 50 Ω source impedance and <5ns rise time on a pulse generator |
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