SOT323 NPN SILICON PLANAR

HIGH PERFORMANCE TRANSISTOR

ISSUE 2 – MARCH 2007

FEATURES

*

Extremely low saturation voltage

*

500mW power dissipation

*

1 Amp continuous collector current (I

APPLICATIONS

*

Ideally suited for space / weight critical applications

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

VALUE

UNIT

Collector Base Voltage

V

CBO

80

V

Collector Emitter Voltage

V

CEO

60

V

Emitter Base Voltage

V

EBO

5V

Peak Pulse Current

I

CM

2A

Continuous Collector Current

I

C

1A

Base Current

I

B

200

mA

Power Dissipation at T

P

tot

500

mW

Operating and Storage Temperature Range

T

-55 to +150

°C

PARAMETER

SYMBOL MIN.

TYP.

MAX.

UNIT

CONDITIONS.

Collector Base

Breakdown Voltage

V

(BR)CBO

80

V

I

Collector Emitter

Breakdown Voltage

V

CEO(sus)

60

V

I

Emitter Base

Breakdown Voltage

V

(BR)EBO

5V

I

Collector Cut Off

Current

I

CBO

100

nA

V

Collector Cut Off

Current

I

CES

100

nA

VCE=60V

Emitter Cut Off Current

I

EBO

100

nA

V

Collector Emitter

Saturation Voltage

V

CE(sat)

0.25

0.50

V

V

I

I

Base Emitter

Saturation Voltage

V

BE(sat)

1.1

V

I

Base Emitter

Turn On Voltage

V

BE(on)

1.0

V

IC=1A, V

* Measured under pulsed conditions. Pulse width 300µS. Duty cycle

2%.

ZUMT491

C

E

B

SOT323