Specifications are subject to change without notice.

Customers should verify actual device performance in their specific applications.

Thin Film on Silicon 2DEA Integrated ESD Protection Diode Array

Features

■

Lead free

■

RoHS compliant*

■

Supports 15 KV IEC 61000-4-2 ESD

equipment specification*

■

Single device protects as many as 20 lines

on exposed pins, communications ports

■

Incorporates 40 bi-directional PN

junction diodes

■

Small form factor replaces 20 SOT23

packages

General Information

The Model 2DEA Series is well-suited for space constrained

designs where the requirements of international ESD standard

specification IEC 61000-4-2 must be met.

These highly integrated PN junction diode arrays are espe-

cially effective for use in PC notebooks and motherboards,

engineering workstations and portable battery-powered

devices such as PDAs and cellular phones.

Space savings, as compared to popular BA V99 SOT23

based implementations, can yield a 75 % reduction in

utilized board area. In addition, significant assembly cost

reductions and manufacturing integrity improvements can

be realized.

Two package options are available. Model 2DEA consists of

20 bi-directional diode pairs in a miniature 24-pin JEDEC

QSOP package. The 2DEB consists of 17 bi-directional

diode pairs in a traditional wide-body SOIC JEDEC package.

* Note: IEC 61000-4-2 ESD test performance is measured at the systems level and system designs, enclosure shielding and other conventional ESD control measures usually influence

the results of these tests. Testing on the component level serves as an indicator that the system passes a specific compliance step, but does not ensure that the system passes at that

level. The Model 2DEA/DEB device, therefore, can support successful implementation of the IEC 61000-4-2 system level ESD standard.

Package Schematic

18

7

17

8

16

9

15

10

14

11

13

12

23

24

2

1

22

3

21

4

20

5

19

6

VSS

VDD

VSS

VDD

Electrical Characteristics

Symbol

Minimum

Nominal

Maximum

Unit

Supply Voltage

VDD - VSS

-0.3

12

V

Voltage @ any Channel

Vin

-0.3

VDD + 0.5

V

Channel Clamp Current (continuous)

IC

±15

mA

Forward Voltage:

@If = 1 mA

Vf

0.8

0.9

V

@If = 12 mA

1.5

V

Leakage Current @ VSS<Vin<VDD = 12 V

0.1

10

µA

Diode Capacitance

5pF

Environmental Characteristics

Operating Temperature

TJ

-55

+125

°C

Storage Temperature

Tstg

-65

+150

°C

Diode Power Rating

20

mW/diode

ESD Performance Withstand*:

Contact Discharge

±8

±9

kV

Air Discharge

±15

±16

kV

Electrical & Environmental Characteristics

*RoHS Directive 2002/95/EC Jan 27 2003 including Annex