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2DEB-2-W20R Datasheet(PDF) 1 Page - Bourns Electronic Solutions |
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2DEB-2-W20R Datasheet(HTML) 1 Page - Bourns Electronic Solutions |
1 / 3 page Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. Thin Film on Silicon 2DEA Integrated ESD Protection Diode Array Features ■ Lead free ■ RoHS compliant* ■ Supports 15 KV IEC 61000-4-2 ESD equipment specification* ■ Single device protects as many as 20 lines on exposed pins, communications ports ■ Incorporates 40 bi-directional PN junction diodes ■ Small form factor replaces 20 SOT23 packages General Information The Model 2DEA Series is well-suited for space constrained designs where the requirements of international ESD standard specification IEC 61000-4-2 must be met. These highly integrated PN junction diode arrays are espe- cially effective for use in PC notebooks and motherboards, engineering workstations and portable battery-powered devices such as PDAs and cellular phones. Space savings, as compared to popular BA V99 SOT23 based implementations, can yield a 75 % reduction in utilized board area. In addition, significant assembly cost reductions and manufacturing integrity improvements can be realized. Two package options are available. Model 2DEA consists of 20 bi-directional diode pairs in a miniature 24-pin JEDEC QSOP package. The 2DEB consists of 17 bi-directional diode pairs in a traditional wide-body SOIC JEDEC package. * Note: IEC 61000-4-2 ESD test performance is measured at the systems level and system designs, enclosure shielding and other conventional ESD control measures usually influence the results of these tests. Testing on the component level serves as an indicator that the system passes a specific compliance step, but does not ensure that the system passes at that level. The Model 2DEA/DEB device, therefore, can support successful implementation of the IEC 61000-4-2 system level ESD standard. Package Schematic 18 7 17 8 16 9 15 10 14 11 13 12 23 24 2 1 22 3 21 4 20 5 19 6 VSS VDD VSS VDD Electrical Characteristics Symbol Minimum Nominal Maximum Unit Supply Voltage VDD - VSS -0.3 12 V Voltage @ any Channel Vin -0.3 VDD + 0.5 V Channel Clamp Current (continuous) IC ±15 mA Forward Voltage: @If = 1 mA Vf 0.8 0.9 V @If = 12 mA 1.5 V Leakage Current @ VSS<Vin<VDD = 12 V 0.1 10 µA Diode Capacitance 5pF Environmental Characteristics Operating Temperature TJ -55 +125 °C Storage Temperature Tstg -65 +150 °C Diode Power Rating 20 mW/diode ESD Performance Withstand*: Contact Discharge ±8 ±9 kV Air Discharge ±15 ±16 kV Electrical & Environmental Characteristics *RoHS Directive 2002/95/EC Jan 27 2003 including Annex |
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