Electronic Components Datasheet Search
  English  ▼
ALLDATASHEET.COM

X  

AS4SD16M16 Datasheet(PDF) 6 Page - Austin Semiconductor

Part # AS4SD16M16
Description  256 MB: 16 Meg x 16 SDRAM Synchronous DRAM Memory
Download  51 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  AUSTIN [Austin Semiconductor]
Direct Link  http://www.austinsemiconductor.com
Logo AUSTIN - Austin Semiconductor

AS4SD16M16 Datasheet(HTML) 6 Page - Austin Semiconductor

Back Button AS4SD16M16 Datasheet HTML 2Page - Austin Semiconductor AS4SD16M16 Datasheet HTML 3Page - Austin Semiconductor AS4SD16M16 Datasheet HTML 4Page - Austin Semiconductor AS4SD16M16 Datasheet HTML 5Page - Austin Semiconductor AS4SD16M16 Datasheet HTML 6Page - Austin Semiconductor AS4SD16M16 Datasheet HTML 7Page - Austin Semiconductor AS4SD16M16 Datasheet HTML 8Page - Austin Semiconductor AS4SD16M16 Datasheet HTML 9Page - Austin Semiconductor AS4SD16M16 Datasheet HTML 10Page - Austin Semiconductor Next Button
Zoom Inzoom in Zoom Outzoom out
 6 / 51 page
background image
SDRAM
SDRAM
SDRAM
SDRAM
SDRAM
AS4SD16M16
Austin Semiconductor, Inc.
AS4SD16M16
Rev. 1.0 11/02
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
6
CAS Latency
The CAS latency is the delay, in clock cycles, between the
registration of a READ command and the availability of the first
piece of output data. The latency can be set to two or three
clocks.
If a READ command is registered at clock edge n, and the
latency is m clocks, the data will be available by clock edge
n + m. The DQs will start driving as a result of the clock edge
one cycle earlier (n + m - 1), and provided that the relevant
access times are met, the data will be valid by clock edge n + m.
For example, assuming that the clock cycle time is such that all
relevant access times are met, if a READ command is registered
at T0 and the latency is programmed to two clocks, the DQs will
start driving after T1 and the data will be valid by T2, as shown
in Figure 2. Table 2 below indicates the operating frequencies
at which each CAS latency setting can be used.
Reserved states should not be used as unknown
operation or incompatibility with future versions may result.
Operating Mode
The normal operating mode is selected by setting M7 and
M8 to zero; the other combinations of values for M7 and M8
are reserved for future use and/or test modes. The programmed
burst length applies to both READ and WRITE bursts.
Test modes are reserved states should not be used
because unknown operation or incompatibility with future
versions may result.
Write Burst Mode
When M9=0, the burst length programmed via M0-M2
applies to both READ and WRITE bursts; when M9=1, the
programmed burst length applies to READ bursts, but write
accesses are single-location (non-burst) accesses.
FIGURE 2: CAS Latency
TABLE 2: CAS Latency
CAS
LATENCY = 2
CAS
LATENCY = 3
-75
<100
<133
SPEED
ALLOWABLE OPERATING
FREQUENCY (MHz)


Similar Part No. - AS4SD16M16

ManufacturerPart #DatasheetDescription
logo
Austin Semiconductor
AS4SD16M16 AUSTIN-AS4SD16M16 Datasheet
2Mb / 52P
   256 MB: 16 Meg x 16 SDRAM Synchronous DRAM Memory
logo
Micross Components
AS4SD16M16 MICROSS-AS4SD16M16 Datasheet
6Mb / 52P
   LVTTL- compatible inputs and outputs
logo
Austin Semiconductor
AS4SD16M16DG-75/IT AUSTIN-AS4SD16M16DG-75/IT Datasheet
2Mb / 52P
   256 MB: 16 Meg x 16 SDRAM Synchronous DRAM Memory
AS4SD16M16DG-75/IT++ AUSTIN-AS4SD16M16DG-75/IT+ Datasheet
2Mb / 52P
   256 MB: 16 Meg x 16 SDRAM Synchronous DRAM Memory
AS4SD16M16DG-75/XT AUSTIN-AS4SD16M16DG-75/XT Datasheet
2Mb / 52P
   256 MB: 16 Meg x 16 SDRAM Synchronous DRAM Memory
More results

Similar Description - AS4SD16M16

ManufacturerPart #DatasheetDescription
logo
Austin Semiconductor
AS4SD16M16 AUSTIN-AS4SD16M16_09 Datasheet
2Mb / 52P
   256 MB: 16 Meg x 16 SDRAM Synchronous DRAM Memory
AS4SD8M16 AUSTIN-AS4SD8M16 Datasheet
6Mb / 51P
   128 Mb: 8 Meg x 16 SDRAM Synchronous DRAM Memory
AS4SD4M16 AUSTIN-AS4SD4M16_05 Datasheet
568Kb / 50P
   4 Meg x 16 SDRAM Synchronous DRAM Memory
AS4SD4M16 AUSTIN-AS4SD4M16 Datasheet
1Mb / 50P
   4 Meg x 16 SDRAM Synchronous DRAM Memory
AS4SD32M16 AUSTIN-AS4SD32M16 Datasheet
1Mb / 52P
   512Mb: 32 Meg x 16 SDRAM Synchronous DRAM Memory
logo
Maxwell Technologies
48SD1616 MAXWELL-48SD1616 Datasheet
596Kb / 42P
   256 Mb SDRAM 4-Meg X 16-Bit X 4-Banks
48SD6404 MAXWELL-48SD6404 Datasheet
596Kb / 42P
   256 Mb SDRAM 16-Meg X 4-Bit X 4-Banks
logo
Etron Technology, Inc.
EM639165 ETRON-EM639165_07 Datasheet
1Mb / 73P
   8Mega x 16 Synchronous DRAM (SDRAM)
EM638165 ETRON-EM638165 Datasheet
1Mb / 71P
   4Mega x 16 Synchronous DRAM (SDRAM)
EM636165-XXI ETRON-EM636165-XXI Datasheet
757Kb / 73P
   1Mega x 16 Synchronous DRAM (SDRAM)
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51


Datasheet Download

Go To PDF Page


Link URL




Privacy Policy
ALLDATASHEET.COM
Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Datasheet Upload   |   Contact us   |   Privacy Policy   |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com